| Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs BB Upadhyay, K Takhar, J Jha, S Ganguly, D Saha Solid-State Electronics 141, 1-6, 2018 | 16 | 2018 |
| Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs K Takhar, BB Upadhyay, YK Yadav, S Ganguly, D Saha Applied Surface Science 481, 219-225, 2019 | 15 | 2019 |
| Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates S Emekar, J Jha, S Mukherjee, M Meer, K Takhar, D Saha, S Ganguly 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 13 | 2017 |
| Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser D Banerjee, K Takhar, S Sankaranarayanan, P Upadhyay, R Ruia, ... Applied Physics Letters 107 (10), 2015 | 12 | 2015 |
| Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts K Takhar, SA Kumar, M Meer, BB Upadhyay, P Upadhyay, D Khachariya, ... Solid-State Electronics 122, 70-74, 2016 | 11 | 2016 |
| Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation P Upadhyay, M Meer, K Takhar, D Khachariya, A Kumar S, D Banerjee, ... physica status solidi (b) 252 (5), 989-995, 2015 | 10 | 2015 |
| Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN M Meer, A Rawat, K Takhar, S Ganguly, D Saha Microelectronic Engineering 219, 111144, 2020 | 9 | 2020 |
| Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs SGDS Mudassar Meer, Sridhar Majety, Kuldeep Takhar Semiconductor Science and Technology 32 (4), 2017 | 8 | 2017 |
| Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors K Takhar, M Meer, BB Upadhyay, S Ganguly, D Saha Solid-State Electronics 131, 39-44, 2017 | 7 | 2017 |
| Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability K Takhar, UP Gomes, K Ranjan, S Rathi, D Biswas IOP Conference Series: Materials Science and Engineering 73 (1), 012001, 2015 | 7 | 2015 |
| Impact of aspect ratio on the logic performance of strained In0. 53Ga0. 47As metamorphic HEMT UP Gomes, K Takhar, S Rathi, D Biswas J. Electron Devices 13, 939-944, 2012 | 6 | 2012 |
| Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors J Jha, BB Upadhyay, K Takhar, N Bhardwaj, S Ganguly, D Saha Journal of Applied Physics 124 (16), 2018 | 3 | 2018 |
| Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures BB Upadhyay, J Jha, K Takhar, S Ganguly, D Saha Journal of Applied Physics 123 (20), 2018 | 3 | 2018 |
| A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications UP Gomes, K Takhar, K Ranjan, S Rathi, D Biswas IOP Conference Series: Materials Science and Engineering 73 (1), 012002, 2015 | 2 | 2015 |
| Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions K Takhar, M Meer, D Khachariya, S Ganguly, D Saha Journal of Vacuum Science & Technology A 33 (5), 2015 | | 2015 |
| Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires D Banerjee, MB Nadar, P Upadhyay, R Singla, S Sankaranarayanan, ... arXiv preprint arXiv:1503.02279, 2015 | | 2015 |
| Simulation Study of Low Dimensional Effects in Pitch-Scaled (90 nm Technology Node) High Electron Mobility Transistors for Very Large Scale Integration Applications UP Gomes, K Takhar, YK Yadav, K Ranjan, S Rathi, D Biswas Journal of nanoelectronics and optoelectronics 8 (2), 170-176, 2013 | | 2013 |
| Improved Ohmic Contact to Gallium Nitride using Trap Assisted Tunneling P Upadhyay, D Khachariya, K Takhar, M Meer, A Kumar, D Saha | | |
| Future prospects of InGaN/GaN Multiple Quantum Well Solar Cells Research for High Quantum Efficiency and Cost effectiveness A Trivedi, YK Yadav, K Takhar, TD Das, S Rathi, D Biswas | | |
Bhanu B. UpadhyayGaN Device Characterization and Modelling, Infineon Technologies, Munich在 iitb.ac.in 的电子邮件经过验证
