| Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process RL Puurunen Journal of applied physics 97 (12), 9, 2005 | 3417 | 2005 |
| Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends V Miikkulainen, M Leskelä, M Ritala, RL Puurunen Journal of Applied Physics 113 (2), 2, 2013 | 1661 | 2013 |
| Conformality in atomic layer deposition: Current status overview of analysis and modelling V Cremers, RL Puurunen, J Dendooven Applied Physics Reviews 6 (2), 021302, 2019 | 399 | 2019 |
| Island growth as a growth mode in atomic layer deposition: A phenomenological model RL Puurunen, W Vandervorst Journal of Applied Physics 96 (12), 7686-7695, 2004 | 386 | 2004 |
| Island growth as a growth mode in atomic layer deposition: A phenomenological model RL Puurunen, W Vandervorst Journal of Applied Physics 96 (12), 7686-7695, 2004 | 386 | 2004 |
| A short history of atomic layer deposition: Tuomo Suntola's atomic layer epitaxy RL Puurunen Chemical Vapor Deposition 20 (10-11-12), 332-344, 2014 | 334 | 2014 |
| Growth per cycle in atomic layer deposition: a theoretical model RL Puurunen Chemical Vapor Deposition 9 (5), 249-257, 2003 | 251 | 2003 |
| Spectroscopic study on the irreversible deactivation of chromia/alumina dehydrogenation catalysts RL Puurunen, BM Weckhuysen Journal of Catalysis 210 (2), 418-430, 2002 | 204 | 2002 |
| Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion OME Ylivaara, X Liu, L Kilpi, J Lyytinen, D Schneider, M Laitinen, J Julin, ... Thin Solid Films 552, 124-135, 2014 | 203 | 2014 |
| Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy RL Puurunen, W Vandervorst, WFA Besling, O Richard, H Bender, ... Journal of applied physics 96 (9), 4878-4889, 2004 | 200 | 2004 |
| Growth Per Cycle in Atomic Layer Deposition: Real Application Examplesof a Theoretical Model RL Puurunen Chemical Vapor Deposition 9 (6), 327-332, 2003 | 137 | 2003 |
| Atomic layer deposition of hafnium oxide on germanium substrates A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ... Journal of applied physics 97 (6), 064104, 2005 | 135 | 2005 |
| Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina RL Puurunen, M Lindblad, A Root, AOI Krause Physical Chemistry Chemical Physics 3 (6), 1093-1102, 2001 | 123 | 2001 |
| Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water RL Puurunen Applied surface science 245 (1-4), 6-10, 2005 | 116 | 2005 |
| Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD” E Ahvenniemi, AR Akbashev, S Ali, M Bechelany, M Berdova, S Boyadjiev, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (1 …, 2017 | 115 | 2017 |
| Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water RL Puurunen Journal of applied physics 95 (9), 4777-4786, 2004 | 103 | 2004 |
| Implementing ALD layers in MEMS processing RL Puurunen, J Saarilahti, H Kattelus ECS Transactions 11 (7), 3, 2007 | 101 | 2007 |
| IR and NMR study of the chemisorption of ammonia on trimethylaluminum-modified silica RL Puurunen, A Root, S Haukka, EI Iiskola, M Lindblad, AOI Krause The Journal of Physical Chemistry B 104 (28), 6599-6609, 2000 | 101 | 2000 |
| Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides: a review RL Puurunen Chemical Vapor Deposition 11 (2), 79-90, 2005 | 92 | 2005 |
| Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors M Putkonen, M Bosund, OME Ylivaara, RL Puurunen, L Kilpi, ... Thin Solid Films 558, 93-98, 2014 | 91 | 2014 |
Timo SajavaaraDepartment of Physics, University of Jyväskylä, Finland在 jyu.fi 的电子邮件经过验证
