| Electrochemical dynamics of nanoscale metallic inclusions in dielectrics Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ... Nature communications 5 (1), 4232, 2014 | 637 | 2014 |
| Nanobatteries in redox-based resistive switches require extension of memristor theory I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ... Nature communications 4 (1), 1771, 2013 | 573 | 2013 |
| Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations E Linn, R Rosezin, S Tappertzhofen, U Böttger, R Waser Nanotechnology 23 (30), 305205, 2012 | 405 | 2012 |
| Generic relevance of counter charges for cation-based nanoscale resistive switching memories S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono ACS nano 7 (7), 6396-6402, 2013 | 253 | 2013 |
| Switching kinetics of electrochemical metallization memory cells S Menzel, S Tappertzhofen, R Waser, I Valov Physical Chemistry Chemical Physics 15 (18), 6945-6952, 2013 | 205 | 2013 |
| Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures T Tsuruoka, I Valov, S Tappertzhofen, J Van Den Hurk, T Hasegawa, ... Advanced functional materials 25 (40), 6374-6381, 2015 | 171 | 2015 |
| Quantum conductance and switching kinetics of AgI-based microcrossbar cells S Tappertzhofen, I Valov, R Waser Nanotechnology 23 (14), 145703, 2012 | 171 | 2012 |
| Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide S Tappertzhofen, H Mündelein, I Valov, R Waser Nanoscale 4 (10), 3040-3043, 2012 | 136 | 2012 |
| Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching S Cho, C Yun, S Tappertzhofen, A Kursumovic, S Lee, P Lu, Q Jia, M Fan, ... Nature communications 7 (1), 12373, 2016 | 111 | 2016 |
| Redox processes in silicon dioxide thin films using copper microelectrodes S Tappertzhofen, S Menzel, I Valov, R Waser Applied physics letters 99 (20), 2011 | 96 | 2011 |
| Impact of the counter‐electrode material on redox processes in resistive switching memories S Tappertzhofen, R Waser, I Valov ChemElectroChem 1 (8), 1287-1292, 2014 | 88 | 2014 |
| Nanobattery effect in RRAMs—implications on device stability and endurance S Tappertzhofen, E Linn, U Böttger, R Waser, I Valov IEEE electron device letters 35 (2), 208-210, 2013 | 68 | 2013 |
| Nanoscale Plasmon‐Enhanced Spectroscopy in Memristive Switches G Di Martino, S Tappertzhofen, S Hofmann, J Baumberg small 12 (10), 1334-1341, 2016 | 66 | 2016 |
| Bond nature of active metal ions in SiO 2-based electrochemical metallization memory cells DY Cho, S Tappertzhofen, R Waser, I Valov Nanoscale 5 (5), 1781-1784, 2013 | 62 | 2013 |
| Capacity based nondestructive readout for complementary resistive switches S Tappertzhofen, E Linn, L Nielen, R Rosezin, F Lentz, R Bruchhaus, ... Nanotechnology 22 (39), 395203, 2011 | 58 | 2011 |
| SiO2 based conductive bridging random access memory W Chen, S Tappertzhofen, HJ Barnaby, MN Kozicki Journal of Electroceramics 39, 109-131, 2017 | 55 | 2017 |
| An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing O Kavehei, E Linn, L Nielen, S Tappertzhofen, E Skafidas, I Valov, ... Nanoscale 5 (11), 5119-5128, 2013 | 52 | 2013 |
| Direct observation of charge transfer in solid electrolyte for electrochemical metallization memory. DY Cho, I Valov, J van den Hurk, S Tappertzhofen, R Waser Advanced Materials (Deerfield Beach, Fla.) 24 (33), 4552-4556, 2012 | 50 | 2012 |
| Quantum conductance in memristive devices: fundamentals, developments, and applications G Milano, M Aono, L Boarino, U Celano, T Hasegawa, M Kozicki, ... Advanced Materials 34 (32), 2201248, 2022 | 48 | 2022 |
| Catalyst interface engineering for improved 2D film lift-off and transfer R Wang, PR Whelan, P Braeuninger-Weimer, S Tappertzhofen, ... ACS Applied Materials & Interfaces 8 (48), 33072-33082, 2016 | 45 | 2016 |
Rainer WaserProfessur Elektronische Materialien, RWTH Aachen University在 iwe.rwth-aachen.de 的电子邮件经过验证
