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Patrick Nsengiyumva
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A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes
P Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ...
IEEE Transactions on nuclear science 63 (1), 266-272, 2016
742016
Analysis of bulk FinFET structural effects on single-event cross sections
P Nsengiyumva, LW Massengill, ML Alles, BL Bhuva, DR Ball, ...
IEEE Transactions on Nuclear Science 64 (1), 441-448, 2016
582016
Angular effects on single-event mechanisms in bulk FinFET technologies
P Nsengiyumva, LW Massengill, JS Kauppila, JA Maharrey, ...
IEEE Transactions on Nuclear Science 65 (1), 223-230, 2017
342017
The impact of charge collection volume and parasitic capacitance on SEUs in SOI-and bulk-FINFET D flip-flops
DR Ball, ML Alles, JS Kauppila, RC Harrington, JA Maharrey, ...
IEEE Transactions on Nuclear Science 65 (1), 326-330, 2017
292017
Impact of single-event transient duration and electrical delay at reduced supply voltages on set mitigation techniques
JA Maharrey, JS Kauppila, RC Harrington, P Nsengiyumva, DR Ball, ...
IEEE Transactions on Nuclear Science 65 (1), 362-368, 2017
242017
Effect of transistor variants on single-event transients at the 14-/16-nm bulk FinFET technology generation
RC Harrington, JA Maharrey, JS Kauppila, P Nsengiyumva, DR Ball, ...
IEEE Transactions on Nuclear Science 65 (8), 1807-1813, 2018
212018
Exploiting parallelism and heterogeneity in a radiation effects test vehicle for efficient single-event characterization of nanoscale circuits
JS Kauppila, JA Maharrey, RC Harrington, TD Haeffner, P Nsengiyumva, ...
IEEE Transactions on Nuclear Science 65 (1), 486-494, 2017
192017
Dual-interlocked logic for single-event transient mitigation
JA Maharrey, JS Kauppila, RC Harrington, P Nsengiyumva, DR Ball, ...
IEEE Transactions on Nuclear Science 65 (8), 1872-1878, 2017
142017
Empirical modeling of FinFET SEU cross sections across supply voltage
RC Harrington, JS Kauppila, JA Maharrey, TD Haeffner, AL Sternberg, ...
IEEE Transactions on Nuclear Science 66 (7), 1427-1432, 2019
132019
Characterization of the CMOS FinFET structure on single-event effects-basic charge collection mechanisms and soft error modes
P Nsengiyumva
Vanderbilt University, 2018
62018
Single-event upset responses of dual-and triple-well designs at advanced planar and FinFET technologies
H Zhang, H Jiang, TR Assis, DR Ball, I Chatterjee, B Narasimham, ...
2016 16th European Conference on Radiation and Its Effects on Components and …, 2016
42016
Investigating power characteristics of memristor-based logic gates and their applications in a security primitive
J Dofe, J Frey, P Nsengiyumva, Q Yu
2015 IEEE 58th International Midwest Symposium on Circuits and Systems …, 2015
42015
Investigation of single-event upsets in dynamic logic based flip-flops
P Nsengiyumva, Q Yu
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 818-821, 2015
22015
Investigating the effects of single-event upsets in static and dynamic registers
P Nsengiyumva
University of New Hampshire, 2014
22014
Exploiting SEU data analysis to extract fast SET pulses
RC Harrington, JS Kauppila, JA Maharrey, TD Haeffner, EX Zhang, ...
IEEE Transactions on Nuclear Science 66 (6), 932-937, 2019
12019
List of Reviewers, RADECS 2020 Special Issue
A Alessi, S Baeg, M Bagatin, D Ball, M Barbero, M Beaumel, J Bi, ...
IEEE Transactions on Nuclear Science 68 (8), 2021
2021
2022 REDW Reviewers
G Allen, R Austin, D Ball, C Bélanger-Champagne, J Calkins, M Campola, ...
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