关注
Valery Yu. Davydov
Valery Yu. Davydov
Dr. Sci., Chief Researcher, Ioffe Institute
在 mail.ioffe.ru 的电子邮件经过验证
标题
引用次数
引用次数
年份
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
14112002
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
VY Davydov, YE Kitaev, IN Goncharuk, AN Smirnov, J Graul, ...
Physical Review B 58 (19), 12899, 1998
9641998
Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC
VY Davydov, NS Averkiev, IN Goncharuk, DK Nelson, IP Nikitina, ...
Journal of applied physics 82 (10), 5097-5102, 1997
4701997
Band gap of hexagonal InN and InGaN alloys
VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ...
physica status solidi (b) 234 (3), 787-795, 2002
4482002
Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1)
VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ...
physica status solidi (b) 230 (2), R4-R6, 2002
4352002
Experimental and theoretical studies of phonons in hexagonal InN
VY Davydov, VV Emtsev, IN Goncharuk, AN Smirnov, VD Petrikov, ...
Applied physics letters 75 (21), 3297-3299, 1999
3421999
Acceptor states in the photoluminescence spectra of
AA Klochikhin, VY Davydov, VV Emtsev, AV Sakharov, VA Kapitonov, ...
Physical Review B—Condensed Matter and Materials Physics 71 (19), 195207, 2005
1842005
Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1− x N alloys
VY Davydov, IN Goncharuk, AN Smirnov, AE Nikolaev, WV Lundin, ...
Physical Review B 65 (12), 125203, 2002
1802002
Phonon structure of InN grown by atomic layer epitaxy
T Inushima, T Shiraishi, VY Davydov
Solid state communications 110 (9), 491-495, 1999
1621999
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
J Aderhold, VY Davydov, F Fedler, H Klausing, D Mistele, T Rotter, ...
Journal of crystal growth 222 (4), 701-705, 2001
1462001
Diamond-graphite phase transition in ultradisperse-diamond clusters
AE Aleksenskii, MV Baidakova, AY Vul’, VY Davydov, YA Pevtsova
Physics of the Solid State 39, 1007-1015, 1997
1451997
Energy gap and optical properties of InxGa1–xN
F Bechstedt, J Furthmüller, M Ferhat, LK Teles, LMR Scolfaro, JR Leite, ...
physica status solidi (a) 195 (3), 628-633, 2003
1372003
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ...
Applied physics letters 83 (23), 4788-4790, 2003
1252003
Phase transition-governed opal–VO2 photonic crystal
VG Golubev, VY Davydov, NF Kartenko, DA Kurdyukov, AV Medvedev, ...
Applied Physics Letters 79 (14), 2127-2129, 2001
1242001
Graphene based sensor for environmental monitoring of NO2
S Novikov, N Lebedeva, A Satrapinski, J Walden, V Davydov, A Lebedev
Sensors and Actuators B: Chemical 236, 1054-1060, 2016
1212016
Electronic and vibrational states in InN and InxGa1−x N solid solutions
VY Davydov, AA Klochikhin
Semiconductors 38, 861-898, 2004
104*2004
Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer
CH Shen, HY Chen, HW Lin, S Gwo, AA Klochikhin, VY Davydov
Applied physics letters 88 (25), 2006
1022006
Rehybridization of carbon on facets of detonation diamond nanocrystals and forming hydrosols of individual particles
AT Dideikin, AE Aleksenskii, MV Baidakova, PN Brunkov, ...
Carbon 122, 737-745, 2017
992017
Physical properties of bulk GaN crystals grown by HVPE
YV Melnik, KV Vassilevski, IP Nikitina, AI Babanin, VY Davydov, ...
MRS Internet Journal of Nitride Semiconductor Research 2, 1-9, 1997
831997
Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
VA Soltamov, BV Yavkin, DO Tolmachev, RA Babunts, AG Badalyan, ...
Physical review letters 115 (24), 247602, 2015
762015
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