| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 80 | 2020 |
| Amorphous IGZO TFTs featuring extremely-scaled channel thickness and 38 nm channel length: Achieving record high Gm, max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm S Samanta, K Han, C Sun, C Wang, AVY Thean, X Gong 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 57 | 2020 |
| Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity S Samanta, U Chand, S Xu, K Han, Y Wu, C Wang, A Kumar, H Velluri, ... IEEE Electron Device Letters 41 (6), 856-859, 2020 | 55 | 2020 |
| First demonstration of BEOL-compatible ferroelectric TCAM featuring a-IGZO Fe-TFTs with large memory window of 2.9 V, scaled channel length of 40 nm, and high endurance of 10 8 … C Sun, K Han, S Samanta, Q Kong, J Zhang, H Xu, X Wang, A Kumar, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 41 | 2021 |
| Demonstration of ferroelectricity in Al-doped HfO₂ with a low thermal budget of 500° C J Zhou, Z Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, X Gong IEEE Electron Device Letters 41 (7), 1130-1133, 2020 | 36 | 2020 |
| First demonstration of oxide semiconductor nanowire transistors: A novel digital etch technique, IGZO channel, nanowire width down to~ 20 nm, and I on exceeding 1300 μA/μm K Han, Q Kong, Y Kang, C Sun, C Wang, J Zhang, H Xu, S Samanta, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 35 | 2021 |
| Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band S Xu, K Han, YC Huang, KH Lee, Y Kang, S Masudy-Panah, Y Wu, D Lei, ... Optics express 27 (19), 26924-26939, 2019 | 35 | 2019 |
| Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width Y Kang, S Xu, K Han, EYJ Kong, Z Song, S Luo, A Kumar, C Wang, W Fan, ... Nano letters 21 (13), 5555-5563, 2021 | 31 | 2021 |
| Temperature-dependent operation of InGaZnO ferroelectric thin-film transistors with a metal-ferroelectric-metal-insulator-semiconductor structure C Sun, Z Zheng, K Han, S Samanta, J Zhou, Q Kong, J Zhang, H Xu, ... IEEE Electron Device Letters 42 (12), 1786-1789, 2021 | 25 | 2021 |
| A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film Z Zhou, J Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, Z Zheng, H Ni, ... IEEE Electron Device Letters 41 (12), 1837-1840, 2020 | 25 | 2020 |
| Amorphous InGaZnO thin-film transistors with sub-10-nm channel thickness and ultrascaled channel length S Samanta, K Han, C Sun, C Wang, A Kumar, AVY Thean, X Gong IEEE Transactions on Electron Devices 68 (3), 1050-1056, 2021 | 23 | 2021 |
| Indium-gallium-zinc-oxide (IGZO) nanowire transistors K Han, Q Kong, Y Kang, C Sun, C Wang, J Zhang, H Xu, S Samanta, ... IEEE Transactions on Electron Devices 68 (12), 6610-6616, 2021 | 18 | 2021 |
| High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate D Lei, K Han, Y Wu, Z Liu, X Gong IEEE Journal of the Electron Devices Society 7, 596-600, 2019 | 18 | 2019 |
| Highly scaled InGaZnO ferroelectric field-effect transistors and ternary content-addressable memory C Sun, K Han, S Samanta, Q Kong, J Zhang, H Xu, X Wang, A Kumar, ... IEEE Transactions on Electron Devices 69 (9), 5262-5269, 2022 | 17 | 2022 |
| Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and … Z Zhou, J Leming, J Zhou, Z Zheng, Y Chen, K Han, Y Kang, X Gong 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 17 | 2022 |
| Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High Pr of 23.7 μC/cm2 J Zhou, Z Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, X Gong IEEE Transactions on Electron Devices 67 (12), 5633-5638, 2020 | 16 | 2020 |
| Improvement in Threshold Switching Performance Using Al₂O₃ Interfacial Layer in Ag/Al₂O₃/SiOₓ/W Cross-Point Platform S Samanta, K Han, S Das, X Gong IEEE Electron Device Letters 41 (6), 924-927, 2020 | 16 | 2020 |
| Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure S Samanta, X Gong, P Zhang, K Han, X Fong Journal of Alloys and Compounds 805, 915-923, 2019 | 15 | 2019 |
| Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68) J Zhou, Z Zhou, L Jiao, X Wang, Y Kang, H Wang, K Han, Z Zheng, ... 2021 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2021 | 13 | 2021 |
| Extraction of polarization-dependent damping constant for dynamic evaluation of ferroelectric films and devices Y Li, K Han, Y Kang, EYJ Kong, X Gong IEEE Electron Device Letters 39 (8), 1211-1214, 2018 | 13 | 2018 |
Xiao GongNational University of Singapore在 nus.edu.sg 的电子邮件经过验证
