关注
Andrian V. Kuchuk, А.В. Кучук, А. Кучук, A.V. Kuchuk
Andrian V. Kuchuk, А.В. Кучук, А. Кучук, A.V. Kuchuk
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USA
在 uark.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Low-temperature method for thermochromic high ordered VO2 phase formation
V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk
Materials Letters 68, 215-217, 2012
822012
Ni‐Based Ohmic Contacts to n‐Type 4H‐SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz, R Ratajczak, ...
Advances in Condensed Matter Physics 2016 (1), 9273702, 2016
602016
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics Letters 42 (3), 387-390, 2017
532017
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7, 1-9, 2012
442012
Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide
A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ...
Journal of Physics: Conference Series 100 (4), 042003, 2008
432008
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Microelectronic Engineering 85 (10), 2142-2145, 2008
392008
Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42, 689-693, 2008
36*2008
Structural transformation and functional properties of vanadium oxide films after low-temperature annealing
Y Goltvyanskyi, I Khatsevych, A Kuchuk, V Kladko, V Melnik, P Lytvyn, ...
Thin Solid Films 564, 179-185, 2014
302014
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
AE Belyaev, VV Basanets, NS Boltovets, AV Zorenko, LM Kapitanchuk, ...
Semiconductors 45, 253-259, 2011
30*2011
Vertically grown zinc oxide nanorods functionalized with ferric oxide for in vivo and non-enzymatic glucose detection
M Marie, A Manoharan, A Kuchuk, S Ang, MO Manasreh
Nanotechnology 29 (11), 115501, 2018
282018
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate
PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ...
AIP Advances 8 (2), 2018
282018
X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates
NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ...
Semiconductor physics quantum electronics & optoelectronics, 2013
282013
Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy I. Mazur, Joe Margetis, John ...
Applied Physics Letters 116 (23), 232101, 2020
252020
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Materials Science and Engineering: B 165 (1-2), 38-41, 2009
252009
Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices
HV Stanchu, AV Kuchuk, M Barchuk, YI Mazur, VP Kladko, ZM Wang, ...
CrystEngComm 19 (22), 2977-2982, 2017
242017
Crystalline GaAs thin film growth on a c-plane sapphire substrate
SK Saha, R Kumar, A Kuchuk, MZ Alavijeh, Y Maidaniuk, YI Mazur, SQ Yu, ...
Crystal Growth & Design 19 (9), 5088-5096, 2019
232019
Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on a Ge/Si (001) substrate
SV Kondratenko, YV Hyrka, YI Mazur, AV Kuchuk, W Dou, H Tran, ...
Acta Materialia 171, 40-47, 2019
222019
Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications
W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ...
Journal of Electronic Materials 45, 6265-6272, 2016
222016
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ...
ACS applied materials & interfaces 7 (41), 23320-23327, 2015
222015
Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices
AV Kuchuk, VP Kladko, TL Petrenko, VP Bryksa, AE Belyaev, YI Mazur, ...
Nanotechnology 25 (24), 245602, 2014
212014
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