| Nanostructured MoS2/BiVO4 Composites for Energy Storage Applications Y Arora, AP Shah, S Battu, CB Maliakkal, S Haram, A Bhattacharya, ... Scientific reports 6 (1), 36294, 2016 | 55 | 2016 |
| Inductively coupled plasma reactive-ion etching of β-Ga2O3: Comprehensive investigation of plasma chemistry and temperature AP Shah, A Bhattacharya Journal of Vacuum Science & Technology A 35 (4), 2017 | 53 | 2017 |
| Determination of InN–GaN heterostructure band offsets from internal photoemission measurements ZH Mahmood, AP Shah, A Kadir, MR Gokhale, S Ghosh, A Bhattacharya, ... Applied Physics Letters 91 (15), 2007 | 29 | 2007 |
| ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment AP Shah, AA Rahman, A Bhattacharya Semiconductor Science and Technology 30 (1), 015021, 2014 | 26 | 2014 |
| The role of hydrostatic stress in determining the bandgap of InN epilayers A Kadir, T Ganguli, R Kumar, MR Gokhale, AP Shah, S Ghosh, BM Arora, ... Applied Physics Letters 91 (11), 2007 | 26 | 2007 |
| Growth of high mobility InSb crystals DB Gadkari, KB Lal, AP Shah, BM Arora Journal of crystal growth 173 (3-4), 585-588, 1997 | 24 | 1997 |
| MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range MR Laskar, T Ganguli, AA Rahman, AP Shah, MR Gokhale, ... physica status solidi (RRL)–Rapid Research Letters 4 (7), 163-165, 2010 | 23 | 2010 |
| Inductively coupled plasma–reactive ion etching of c-and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry AP Shah, MR Laskar, A Azizur Rahman, MR Gokhale, A Bhattacharya Journal of Vacuum Science & Technology A 31 (6), 2013 | 16 | 2013 |
| Charge deep level transient spectroscopy of electron traps in MOVPE grown n‐GaN on sapphire ZH Mahmood, AP Shah, A Kadir, MR Gokhale, A Bhattacharya, BM Arora physica status solidi (b) 245 (11), 2567-2571, 2008 | 13 | 2008 |
| Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma AP Shah, AA Rahman, A Bhattacharya Journal of Vacuum Science & Technology - A 38, 013001, 2020 | 12 | 2020 |
| Facile synthesis of WS 2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical properties E Hossain, AA Rahman, RD Bapat, JB Parmar, AP Shah, A Arora, ... Nanoscale 10 (35), 16683-16691, 2018 | 10 | 2018 |
| High-responsivity high-gain In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy A Majumdar, A Shah, M Gokhale, S Sen, S Ghosh, BM Arora, D Tsui IEEE journal of quantum electronics 41 (6), 872-878, 2005 | 9 | 2005 |
| Electrical characteristics of GaAs implanted with 70 MeV 120Sn ions YP Ali, AM Narsale, U Bhambhani, A Damle, VP Salvi, BM Arora, AP Shah, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 9 | 1996 |
| Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation S Datta, MR Gokhale, AP Shah, BM Arora, S Kumar Applied Physics Letters 77 (26), 4383-4385, 2000 | 7 | 2000 |
| Doping and surface morphology of AlxGa1− xAs/GaAs grown at low temperature by liquid-phase epitaxy SS Chandvankar, AP Shah, BM Arora Journal of crystal growth 186 (3), 329-337, 1998 | 7 | 1998 |
| Influence of fabrication processes on transport properties of superconducting niobium nitride nanowires M Singh, R Chaujar, S Husale, S Grover, AP Shah, MM Deshmukh, ... Current Science, 1443-1450, 2018 | 6 | 2018 |
| Inductively coupled plasma reactive ion etching of III-nitride semiconductors AP Shah, MR Laskar, AA Rahman, MR Gokhale, A Bhattacharya AIP Conference Proceedings 1512 (1), 494-495, 2013 | 4 | 2013 |
| Effect of facet coatings on laser diode characteristics PV Bhore, AP Shah, MR Gokhale, S Ghosh, A Bhattacharya, BM Arora CSIR, 2004 | 4 | 2004 |
| Annealing effects on electrical characteristics of 100 MeV 28Si implantation in GaAs AM Narsale, AR Damle, YP Ali, D Kanjilal, BM Arora, AP Shah, SG Lokhre, ... Journal of Materials Science: Materials in Electronics 11 (5), 439-443, 2000 | 4 | 2000 |
| Short interval open tube diffusion of Zn in GaAs at low temperatures TK Sharma, AP Shah, MR Gokhale, CJ Panchal, BM Arora Semiconductor science and technology 14 (4), 327, 1999 | 4 | 1999 |
Arnab BhattacharyaProfessor, Dept. of CMPMS, Tata Institute of Fundamental Research在 tifr.res.in 的电子邮件经过验证
