| Aerosol Filtration Efficiency of Common Fabrics Used in Respiratory Cloth Masks A Konda*, A Prakash*, GA Moss, M Schmoldt, GD Grant, S Guha, ... ACS Nano 14 (5), 6339–6347, 2020 | 1089 | 2020 |
| Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1 A Prakash, P Xu, A Faghaninia, S Shukla, JW Ager III, CS Lo, B Jalan Nature communications 8, 15167, 2017 | 232 | 2017 |
| Band alignment at epitaxial BaSnO3/SrTiO3 (001) and BaSnO3/LaAlO3 (001) heterojunctions SA Chambers, TC Kaspar, A Prakash, G Haugstad, B Jalan Applied Physics Letters 108 (15), 2016 | 121 | 2016 |
| Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films A Prakash, P Xu, X Wu, G Haugstad, X Wang, B Jalan Journal of Materials Chemistry C 5 (23), 5730-5736, 2017 | 113 | 2017 |
| Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3 A Prakash, J Dewey, H Yun, JS Jeong, KA Mkhoyan, B Jalan Journal of Vacuum Science & Technology A 33 (6), 060608, 2015 | 107 | 2015 |
| Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3 K Ganguly, A Prakash, B Jalan, C Leighton APL Materials 5 (5), 056102, 2017 | 68 | 2017 |
| Engineering SrSnO3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain T Wang*, A Prakash*, Y Dong, T Truttmann, A Bucsek, R James, DD Fong, ... ACS applied materials & interfaces 10 (50), 43802-43808, 2018 | 56 | 2018 |
| Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material J Yue, A Prakash, MC Robbins, SJ Koester, B Jalan ACS applied materials & interfaces 10 (25), 21061-21065, 2018 | 52 | 2018 |
| Defect-driven localization crossovers in MBE-grown La-doped SrSnO3 films T Wang, LR Thoutam, A Prakash, W Nunn, G Haugstad, B Jalan Physical Review Materials 1 (6), 061601, 2017 | 52 | 2017 |
| Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility A Prakash, B Jalan Advanced Materials Interfaces 6 (15), 1900479, 2019 | 41 | 2019 |
| Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET VRSK Chaganti, A Prakash, J Yue, B Jalan, SJ Koester IEEE Electron Device Letters 39 (9), 1381-1384, 2018 | 40 | 2018 |
| Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices MK Singh, A Prakash, G Wolfowicz, J Wen, Y Huang, T Rajh, ... APL Materials 8 (3), 2020 | 35 | 2020 |
| Machine learning analysis of perovskite oxides grown by molecular beam epitaxy SR Provence, S Thapa, R Paudel, TK Truttmann, A Prakash, B Jalan, ... Physical Review Materials 4 (8), 083807, 2020 | 33 | 2020 |
| Dopant solubility and charge compensation in La-doped SrSnO3 films T Truttmann, A Prakash, J Yue, TE Mates, B Jalan Applied Physics Letters 115 (15), 2019 | 33 | 2019 |
| Response to letters to the editor on aerosol filtration efficiency of common fabrics used in respiratory cloth masks: Revised and expanded results A Konda, A Prakash, GA Moss, M Schmoldt, GD Grant, S Guha ACS nano 14 (9), 10764-10770, 2020 | 32 | 2020 |
| Aerosol filtration efficiency of common fabrics used in respiratory cloth masks. ACS Nano 14, 6339–6347 A Konda, A Prakash, GA Moss, M Schmoldt, GD Grant, S Guha Link: https://bit. ly/3ksgRcu, 2020 | 30 | 2020 |
| Interconversion of intrinsic defects in SA Chambers, Y Du, Z Zhu, J Wang, MJ Wahila, LFJ Piper, A Prakash, ... Physical Review B 97 (24), 245204, 2018 | 27 | 2018 |
| Molecular beam epitaxy growth of SnO2 using a tin chemical precursor T Wang, A Prakash, E Warner, WL Gladfelter, B Jalan Journal of Vacuum Science & Technology A 33 (2), 2015 | 25 | 2015 |
| Separating electrons and donors in basno3 via band engineering A Prakash*, NF Quackenbush*, H Yun, J Held, T Wang, T Truttmann, ... Nano letters 19 (12), 8920-8927, 2019 | 24 | 2019 |
| Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO3 Films LR Thoutam, J Yue, A Prakash, T Wang, KE Elangovan, B Jalan ACS applied materials & interfaces 11 (8), 7666-7670, 2019 | 24 | 2019 |
Bharat JalanProfessor, CEMS, University of Minnesota在 umn.edu 的电子邮件经过验证
