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Alain Diebold
Alain Diebold
在 albany.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Handbook of semiconductor manufacturing technology
Y Nishi, R Doering
CRC press, 2000
10522000
Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry
FJ Nelson, VK Kamineni, T Zhang, ES Comfort, JU Lee, AC Diebold
Applied Physics Letters 97 (25), 2010
2332010
Handbook of silicon semiconductor metrology
AC Diebold
CRC press, 2001
2012001
Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy
E Bersch, M Di, S Consiglio, RD Clark, GJ Leusink, AC Diebold
Journal of Applied Physics 107 (4), 2010
1312010
Randomly oriented Angstrom‐scale microroughness at the Si(100)/SiO2 interface probed by optical second harmonic generation
JI Dadap, B Doris, Q Deng, MC Downer, JK Lowell, AC Diebold
Applied Physics Letters 64 (16), 2139-2141, 1994
1241994
Characterization of two‐dimensional dopant profiles: Status and review
AC Diebold, MR Kump, JJ Kopanski, DG Seiler
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
1201996
Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody–Lorentz parameterized model
J Price, PY Hung, T Rhoad, B Foran, AC Diebold
Applied Physics Letters 85 (10), 1701-1703, 2004
1162004
Electronic excitations in graphene in the 1–50 eV range: the π and π+ σ peaks are not plasmons
FJ Nelson, JC Idrobo, JD Fite, ZL Miskovic, SJ Pennycook, ST Pantelides, ...
Nano Letters 14 (7), 3827-3831, 2014
922014
Optical second-harmonic generation induced by electric current in graphene on Si and SiC substrates
YQ An, JE Rowe, DB Dougherty, JU Lee, AC Diebold
Physical Review B 89 (11), 115310, 2014
812014
Enhanced Optical Second-Harmonic Generation from the Current-Biased Graphene/SiO2/Si(001) Structure
YQ An, F Nelson, JU Lee, AC Diebold
Nano letters 13 (5), 2104-2109, 2013
812013
Spatial distributions of trapping centers in HfO2∕ SiO2 gate stacks
D Heh, CD Young, GA Brown, PY Hung, A Diebold, G Bersuker, EM Vogel, ...
Applied physics letters 88 (15), 2006
812006
Characterization and production metrology of thin transistor gate oxide films
AC Diebold, D Venables, Y Chabal, D Muller, M Weldon, E Garfunkel
Materials Science in Semiconductor Processing 2 (2), 103-147, 1999
791999
Thin dielectric film thickness determination by advanced transmission electron microscopy
AC Diebold, B Foran, C Kisielowski, DA Muller, SJ Pennycook, E Principe, ...
Microscopy and Microanalysis 9 (6), 493-508, 2003
732003
Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition
NV Nguyen, S Sayan, I Levin, JR Ehrstein, IJR Baumvol, C Driemeier, ...
Journal of Vacuum Science & Technology A 23 (6), 1706-1713, 2005
662005
Applying X-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void growth in through-silicon vias
LW Kong, JR Lloyd, KB Yeap, E Zschech, A Rudack, M Liehr, A Diebold
Journal of applied physics 110 (5), 2011
652011
Surface oxidation of the topological insulator Bi2Se3
AJ Green, S Dey, YQ An, B O'Brien, S O'Mullane, B Thiel, AC Diebold
Journal of Vacuum Science & Technology A 34 (6), 2016
612016
Spatial Distributions of Trapping Centers in Gate Stack
D Heh, CD Young, GA Brown, PY Hung, A Diebold, EM Vogel, ...
IEEE transactions on electron devices 54 (6), 1338-1345, 2007
612007
Perspective: Optical measurement of feature dimensions and shapes by scatterometry
NK A.C. Diebold, A. Antonelli
APL Materials 6, 058201, 2018
572018
Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry
M Di, E Bersch, AC Diebold, S Consiglio, RD Clark, GJ Leusink, T Kaack
Journal of Vacuum Science & Technology A 29 (4), 2011
562011
Identification of sub-band-gap absorption features at the HfO2∕ Si (100) interface via spectroscopic ellipsometry
J Price, PS Lysaght, SC Song, HJ Li, AC Diebold
Applied Physics Letters 91 (6), 2007
502007
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