| Digital performance assessment of the dual-material gate GaAs/InAs/Ge junctionless TFET M Vadizadeh IEEE Transactions on Electron Devices 68 (4), 1986-1991, 2021 | 32 | 2021 |
| Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies M Vadizadeh Journal of Computational Electronics 17, 745-755, 2018 | 21 | 2018 |
| Improving gate delay and I ON/I OFF in nanoscale heterostructure field effect diode (H-FED) by using heavy doped layers in the channel M Vadizadeh Applied Physics A: Materials Science and Processing 122 (4), 469, 2016 | 18 | 2016 |
| Silicon on raised insulator field effect diode (SORI-FED) for alleviating scaling problem in FED M Vadizadeh, M Fathipour, G Darvish International Journal of Modern Physics B 28 (05), 1450038, 2014 | 18 | 2014 |
| Impact of channel doping engineering on the high-frequency noise performance of junctionless In0. 3Ga0. 7As/GaAs FET: a numerical simulation study M Fallahnejad, M Vadizadeh, A Salehi, A Kashaniniya, F Razaghian Physica E: Low-dimensional Systems and Nanostructures 115, 113715, 2020 | 17 | 2020 |
| Designing a hetrostructure junctionless-field effect transistor (HJL-FET) for high-speed applications M Vadizadeh Journal of the Korean Physical Society 71, 275-282, 2017 | 12 | 2017 |
| Dual material gate nanowire field effect diode (DMG-NWFED): Operating principle and properties M Vadizadeh Microelectronics Journal 71, 1-7, 2018 | 11 | 2018 |
| Junctionless field effect diode (JL-FED): A first-principles study M Vadizadeh ECS Journal of Solid State Science and Technology 8 (6), M60, 2019 | 10 | 2019 |
| Performance enhancement of field effect transistor without doping junctions using InGaAs/GaAs for analog/RF applications M Fallahnejad, M Vadizadeh, A Salehi International Journal of Modern Physics B 33 (07), 1950050, 2019 | 10 | 2019 |
| Design and Simulation Noise Characteristics of AlGaN/GaN HEMT on SIC Substrate for Low Noise Applications M Fallahnejad, A Kashaniniya, M Vadizadeh Journal of Electric al and Electronics Engineering (IOSR - JEEE) 10 (3), 31 - 37, 2015 | 10 | 2015 |
| Using low-k oxide for reduction of leakage current in double gate tunnel FET M Vadizadeh, M Fathipour 2009 10th International Conference on Ultimate Integration of Silicon, 301-304, 2009 | 8 | 2009 |
| A novel nanoscale tunnel FET structure for increasing on/off current ratio M Vadizadeh, M Fathipour, A Amid 2008 International Conference on Microelectronics, 300-303, 2008 | 8 | 2008 |
| Low-power ultradeep-submicrometer junctionless carbon nanotube field-effect diode SS Ghoreishi, M Vadizadeh, R Yousefi, A Afzalian IEEE Transactions on Electron Devices 69 (1), 400-405, 2021 | 7 | 2021 |
| High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters M Fallahnejad, A Amini, A Khodabakhsh, M Vadizadeh Applied Physics A 128 (1), 47, 2022 | 6 | 2022 |
| Double gate double-channel AlGaN/GaN MOS HEMT and its applications to LNA with Sub-1 dB noise figure M Vadizadeh, M Fallahnejad, M Shaveisi, R Ejlali, F Bajelan Silicon 15 (2), 1093-1103, 2023 | 5 | 2023 |
| Junctionless In0. 3Ga0. 7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications M Vadizadeh, M Fallahnejad, R Ejlali Journal of Computational Electronics 21 (5), 1127-1137, 2022 | 5 | 2022 |
| Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaInAs/GaAs field-effect transistor M Vadizadeh, M Fallahnejad International Journal of Modern Physics B 35 (23), 2150238, 2021 | 5 | 2021 |
| Performance estimation of junctionless field effect diode M Vadizadeh Applied Physics A: Materials Science and Processing 125 (8), 1-9, 2019 | 5 | 2019 |
| Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical … M Vadizadeh, M Fallahnejad, P Sotoodeh, R Ejlali, M Azadmanesh Materials Science and Engineering: B 292, 116445, 2023 | 3 | 2023 |
| Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications M Fallahnejad, A Khodabakhsh, A Amini, M Vadizadeh Applied Physics A 129 (5), 336, 2023 | 2 | 2023 |
Mohammad FallahnejadAssistant Professor of Electronic Engineering,Central Tehran Branch, Islamic Azad University在 iauctb.ac.ir 的电子邮件经过验证
