Field effect transistors for terahertz detection: Physics and first imaging applications W Knap, M Dyakonov, D Coquillat, F Teppe, N Dyakonova, J Łusakowski, ... Journal of Infrared, Millimeter, and Terahertz Waves 30, 1319-1337, 2009 | 450 | 2009 |
Resonant and voltage-tunable terahertz detection in InGaAs∕ InP nanometer transistors A El Fatimy, F Teppe, N Dyakonova, W Knap, D Seliuta, G Valušis, ... Applied physics letters 89 (13), 2006 | 267 | 2006 |
Room-temperature terahertz emission from nanometer field-effect transistors N Dyakonova, A El Fatimy, J Lusakowskil, W Knap, MI Dyakonov, ... 2006 Joint 31st International Conference on Infrared Millimeter Waves and …, 2006 | 195 | 2006 |
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources A El Fatimy, N Dyakonova, Y Meziani, T Otsuji, W Knap, S Vandenbrouk, ... Journal of Applied Physics 107 (2), 2010 | 193 | 2010 |
Terahertz detection by GaN/AlGaN transistors A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ... Electronics Letters 42 (23), 1342-1344, 2006 | 140 | 2006 |
Epitaxial graphene quantum dots for high-performance terahertz bolometers A El Fatimy, RL Myers-Ward, AK Boyd, KM Daniels, DK Gaskill, P Barbara Nature nanotechnology 11 (4), 335-338, 2016 | 134 | 2016 |
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors F Teppe, M Orlov, A El Fatimy, A Tiberj, W Knap, J Torres, V Gavrilenko, ... Applied Physics Letters 89 (22), 2006 | 93 | 2006 |
Terahertz imaging with GaAs field-effect transistors A Lisauskas, W Von Spiegel, S Boubanga-Tombet, A El Fatimy, ... Electronics Letters 44 (6), 1, 2008 | 82 | 2008 |
Broadband terahertz imaging of documents written with lead pencils E Abraham, A Younus, A El Fatimy, JC Delagnes, E Nguéma, P Mounaix Optics Communications 282 (15), 3104-3107, 2009 | 62 | 2009 |
Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors J Łusakowski, W Knap, Y Meziani, JP Cesso, AE Fatimy, R Tauk, ... Applied physics letters 87 (5), 2005 | 61 | 2005 |
Highly sensitive MoS2 photodetectors with graphene contacts P Han, LS Marie, QX Wang, N Quirk, A El Fatimy, M Ishigami, P Barbara Nanotechnology 29 (20), 20LT01, 2018 | 58 | 2018 |
Field effect transistors for terahertz detection and emission W Knap, S Nadar, H Videlier, S Boubanga-Tombet, D Coquillat, ... Journal of Infrared, Millimeter, and Terahertz Waves 32, 618-628, 2011 | 52 | 2011 |
Ambient Effects on Photogating in MoS2 Photodetectors P Han, E Adler, Y Liu, LS Marie, AE Fatimy, S Melis, E Van Keuren, ... https://iopscience.iop.org/article/10.1088/1361-6528/ab149e/meta, 2019 | 47 | 2019 |
Terahertz emission from collapsing field domains during switching of a gallium arsenide bipolar transistor S Vainshtein, J Kostamovaara, V Yuferev, W Knap, A Fatimy, ... Physical review letters 99 (17), 176601, 2007 | 44 | 2007 |
Ultra-broadband photodetectors based on epitaxial graphene quantum dots A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ... Nanophotonics 7 (4), 735-740, 2018 | 43 | 2018 |
Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications A El Fatimy, JC Delagnes, A Younus, E Nguema, F Teppe, W Knap, ... Optics Communications 282 (15), 3055-3058, 2009 | 39 | 2009 |
Broadening of the plasmon resonance due to plasmon-plasmon intermode scattering in terahertz high-electron-mobility transistors VV Popov, OV Polischuk, W Knap, A El Fatimy Applied Physics Letters 93 (26), 2008 | 37 | 2008 |
Phosphorene—an emerging two-dimensional material: recent advances in synthesis, functionalization, and applications V Chaudhary, P Neugebauer, O Mounkachi, S Lahbabi, A El Fatimy 2D Materials 9 (3), 032001, 2022 | 34 | 2022 |
Electron mobility in quasi-ballistic Si MOSFETs J Łusakowski, W Knap, Y Meziani, JP Cesso, A El Fatimy, R Tauk, ... Solid-state electronics 50 (4), 632-636, 2006 | 31 | 2006 |
Nat. Nanotechnol A El Fatimy, RL Myers-Ward, AK Boyd, KM Daniels, DK Gaskill, P Barbara Nat. Nanotechnol 11, 335-338, 2016 | 30 | 2016 |