| Role of strain and growth conditions on the growth front profile of In_x Ga_(1-x) As on GaAs during the pseudomorphic growth regime PR Berger, K Chang, P Bhattacharya, J Singh, KK Bajaj Applied Physics Letters 53 (8), 684-686, 1988 | 318 | 1988 |
| Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles WJ Yoon, KY Jung, J Liu, T Duraisamy, R Revur, FL Teixeira, S Sengupta, ... Solar Energy Materials and Solar Cells 94 (2), 128-132, 2010 | 267 | 2010 |
| Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double‐heterojunction NpN bipolar transistors … N Chand, PR Berger, NK Dutta Applied Physics Letters 59 (2), 186-188, 1991 | 219 | 1991 |
| Room temperature operation of epitaxially grown Si/SiGe/Si resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73, pp. 2191-2193, 1998 | 205 | 1998 |
| Polymer solar cells: P3HT: PCBM and beyond PR Berger, M Kim Journal of Renewable and Sustainable Energy 10 (1), 2018 | 166 | 2018 |
| Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography MJ Word, I Adesida, PR Berger Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 135 | 2003 |
| Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection Y Xu, PR Berger, JN Wilson, UHF Bunz Applied physics letters 85 (18), 4219-4221, 2004 | 89 | 2004 |
| Self-aligned and self-limited quantum dot nanoswitches and methods for making same PR Berger US Patent 7,015,497, 2006 | 86 | 2006 |
| 4.8% efficient poly (3-hexylthiophene)-fullerene derivative (1: 0.8) bulk heterojunction photovoltaic devices with plasma treated AgO_x/indium tin oxide anode modification WJ Yoon, PR Berger Applied Physics Letters 92 (1), 013306-013306-3, 2008 | 80 | 2008 |
| Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ... Applied Physics Letters 78 (6), 814-816, 2001 | 76 | 2001 |
| Si-based resonant interband tunneling diodes and method of making interband tunneling diodes PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel US Patent 6,803,598, 2004 | 75 | 2004 |
| Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ... IEEE electron device letters 25 (9), 646-648, 2004 | 75 | 2004 |
| Optical and electronic properties of SiGeC alloys grown on Si substrates J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ... Journal of crystal growth 157 (1-4), 386-391, 1995 | 74 | 1995 |
| Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ... IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000 | 72 | 2000 |
| Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ... Applied Physics Letters 109 (8), 2016 | 64 | 2016 |
| peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications N Jin, SY Chung, AT Rice, PR Berger, R Yu, PE Thompson, R Lake Applied physics letters 83 (16), 3308-3310, 2003 | 64 | 2003 |
| Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping PK Bhattacharya, S Dhar, P Berger, FY Juang Applied physics letters 49 (8), 470-472, 1986 | 63 | 1986 |
| Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ... Solid-State Electronics 48 (10-11), 1907-1910, 2004 | 61 | 2004 |
| In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts W Gao, AS Khan, PR Berger, RG Hunsperger, G Zydzik, HM O’Bryan, ... Applied physics letters 65 (15), 1930-1932, 1994 | 61 | 1994 |
| Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ... IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003 | 60 | 2003 |
Sean RommelProfessor, Rochester Institute of Technology在 rit.edu 的电子邮件经过验证
