| SiGe intermixing in Ge/Si (100) islands G Capellini, M De Seta, F Evangelisti Applied Physics Letters 78 (3), 303-305, 2001 | 210 | 2001 |
| Strain relaxation in high Ge content SiGe layers deposited on Si G Capellini, M De Seta, Y Busby, M Pea, F Evangelisti, G Nicotra, ... Journal of Applied Physics 107 (6), 2010 | 93 | 2010 |
| Ordering self-assembled islands without substrate patterning G Capellini, M De Seta, C Spinella, F Evangelisti Applied physics letters 82 (11), 1772-1774, 2003 | 77 | 2003 |
| High temperature x ray diffraction measurements on Ge/Si (001) heterostructures: A study on the residual tensile strain G Capellini, M De Seta, P Zaumseil, G Kozlowski, T Schroeder Journal of Applied Physics 111 (7), 2012 | 76 | 2012 |
| Intermixing-promoted scaling of Ge/Si (100) island sizes M De Seta, G Capellini, F Evangelisti, C Spinella Journal of applied physics 92 (1), 614-619, 2002 | 67 | 2002 |
| Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions T Grange, D Stark, G Scalari, J Faist, L Persichetti, L Di Gaspare, ... Applied Physics Letters 114 (11), 2019 | 64 | 2019 |
| Investigating the CVD synthesis of graphene on Ge (100): toward layer-by-layer growth AM Scaparro, V Miseikis, C Coletti, A Notargiacomo, M Pea, M De Seta, ... ACS applied materials & interfaces 8 (48), 33083-33090, 2016 | 63 | 2016 |
| Direct evidence of C 60 chemical bonding on Si (100) M De Seta, D Sanvitto, F Evangelisti Physical Review B 59 (15), 9878, 1999 | 57 | 1999 |
| Ge–Si intermixing in Ge quantum dots on Si F Boscherini, G Capellini, L Di Gaspare, M De Seta, F Rosei, A Sgarlata, ... Thin Solid Films 380 (1-2), 173-175, 2000 | 52 | 2000 |
| Near-and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells Y Busby, M De Seta, G Capellini, F Evangelisti, M Ortolani, M Virgilio, ... Physical Review B—Condensed Matter and Materials Physics 82 (20), 205317, 2010 | 51 | 2010 |
| Self-ordering of a Ge island single layer induced by Si overgrowth G Capellini, M De Seta, F Evangelisti, VA Zinovyev, G Vastola, ... Physical review letters 96 (10), 106102, 2006 | 48 | 2006 |
| Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si–Ge nanostructures R Marchetti, F Montalenti, L Miglio, G Capellini, M De Seta, F Evangelisti Applied Physics Letters 87 (26), 2005 | 44 | 2005 |
| SiC formation on Si (100) via C60 precursors M De Seta, N Tomozeiu, D Sanvitto, F Evangelisti Surface science 460 (1-3), 203-213, 2000 | 44 | 2000 |
| Ge/Si (100) islands: Growth dynamics versus growth rate G Capellini, M De Seta, F Evangelisti Journal of applied physics 93 (1), 291-295, 2003 | 42 | 2003 |
| Conduction band intersubband transitions in Ge/SiGe quantum wells M De Seta, G Capellini, Y Busby, F Evangelisti, M Ortolani, M Virgilio, ... Applied Physics Letters 95 (5), 2009 | 38 | 2009 |
| Early stage of CVD graphene synthesis on Ge (001) substrate L Di Gaspare, AM Scaparro, M Fanfoni, L Fazi, A Sgarlata, ... Carbon 134, 183-188, 2018 | 37 | 2018 |
| Electronic states at the Fermi level of doped M De Seta, F Evangelisti Physical review letters 71 (15), 2477, 1993 | 37 | 1993 |
| Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ... Physical Review Applied 13 (4), 044062, 2020 | 36 | 2020 |
| Control of Electron-State Coupling in Asymmetric Quantum Wells C Ciano, M Virgilio, M Montanari, L Persichetti, L Di Gaspare, M Ortolani, ... Physical Review Applied 11 (1), 014003, 2019 | 34 | 2019 |
| Physical mechanisms of intersubband-absorption linewidth broadening in -Ge/SiGe quantum wells M Virgilio, D Sabbagh, M Ortolani, L Di Gaspare, G Capellini, M De Seta Physical Review B 90 (15), 155420, 2014 | 34 | 2014 |
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance Microelectronics在 uniroma3.it 的电子邮件经过验证
