| A 2.6 nW, 0.45 V temperature-compensated subthreshold CMOS voltage reference L Magnelli, F Crupi, P Corsonello, C Pace, G Iannaccone IEEE Journal of Solid-State Circuits 46 (2), 465-474, 2010 | 332 | 2010 |
| Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ... IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009 | 141 | 2009 |
| Design of a 75‐nW, 0.5‐V subthreshold complementary metal–oxide–semiconductor operational amplifier L Magnelli, FA Amoroso, F Crupi, G Cappuccino, G Iannaccone International Journal of Circuit Theory and Applications 42 (9), 967-977, 2014 | 117 | 2014 |
| On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers F Crupi, R Degraeve, G Groeseneken, T Nigam, HE Maes IEEE Transactions on Electron Devices 45 (11), 2329-2334, 1998 | 116 | 1998 |
| Impact strain engineering on gate stack quality and reliability C Claeys, E Simoen, S Put, G Giusi, F Crupi Solid-State Electronics 52 (8), 1115-1126, 2008 | 109 | 2008 |
| An ultralow-voltage energy-efficient level shifter M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016 | 105 | 2016 |
| Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi Journal of applied physics 86 (11), 6382-6391, 1999 | 99 | 1999 |
| Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/bulk trap density in a SiO/sub 2//HfO/sub 2/stack F Crupi, R Degraeve, A Kerber, DH Kwak, G Groeseneken 2004 IEEE International Reliability Physics Symposium. Proceedings, 181-187, 2004 | 94 | 2004 |
| Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ... IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015 | 85 | 2015 |
| A Sub- Voltage Reference Operating at 150 mV D Albano, F Crupi, F Cucchi, G Iannaccone IEEE Transactions on very large scale integration (VLSI) systems 23 (8 …, 2014 | 77 | 2014 |
| Digital and analog TFET circuits: Design and benchmark S Strangio, F Settino, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi Solid-State Electronics 146, 50-65, 2018 | 74 | 2018 |
| Mixed tunnel-FET/MOSFET level shifters: A new proposal to extend the tunnel-FET application domain M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni IEEE Transactions on Electron Devices 62 (12), 3973-3979, 2015 | 74 | 2015 |
| Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys IEEE Electron Device Letters 27 (8), 688-691, 2006 | 69 | 2006 |
| Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics G Giusi, F Crupi, C Pace, C Ciofi, G Groeseneken IEEE Transactions on Electron Devices 53 (4), 823-828, 2006 | 69 | 2006 |
| Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories LM Procel, L Trojman, J Moreno, F Crupi, V Maccaronio, R Degraeve, ... Journal of Applied Physics 114 (7), 2013 | 68 | 2013 |
| Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ... IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011 | 68 | 2011 |
| Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits F Settino, M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni, L Selmi IEEE Transactions on Electron Devices 64 (6), 2736-2743, 2017 | 67 | 2017 |
| Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ... Journal of applied physics 84 (1), 472-479, 1998 | 67 | 1998 |
| On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge Junctions E Simoen, F De Stefano, G Eneman, B De Jaeger, C Claeys, F Crupi IEEE Electron Device Letters 30 (5), 562-564, 2009 | 65 | 2009 |
| Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ... Applied Physics Letters 97 (5), 2010 | 64 | 2010 |
Marco LanuzzaUniversity of Calabria在 deis.unical.it 的电子邮件经过验证
