| Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition SJ Rosner, EC Carr, MJ Ludowise, G Girolami, HI Erikson Applied Physics Letters 70 (4), 420-422, 1997 | 740 | 1997 |
| Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ... Applied Physics Letters 72 (6), 692-694, 1998 | 607 | 1998 |
| Deposition of three-dimensional Ge islands on Si (001) by chemical vapor deposition at atmospheric and reduced pressures TI Kamins, EC Carr, RS Williams, SJ Rosner Journal of Applied Physics 81 (1), 211-219, 1997 | 395 | 1997 |
| Calibrated nanoscale capacitance measurements using a scanning microwave microscope HP Huber, M Moertelmaier, TM Wallis, CJ Chiang, M Hochleitner, A Imtiaz, ... Review of Scientific Instruments 81 (11), 2010 | 181 | 2010 |
| The role of threading dislocations in the physical properties of GaN and its alloys JS Speck, SJ Rosner Physica B: Condensed Matter 273, 24-32, 1999 | 145 | 1999 |
| Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride SJ Rosner, G Girolami, H Marchand, PT Fini, JP Ibbetson, L Zhao, ... Applied physics letters 74 (14), 2035-2037, 1999 | 122 | 1999 |
| Low‐resistance Ohmic conduction across compound semiconductor wafer‐bonded interfaces FA Kish, DA Vanderwater, MJ Peanasky, MJ Ludowise, SG Hummel, ... Applied physics letters 67 (14), 2060-2062, 1995 | 119 | 1995 |
| GaAs to InP wafer fusion RJ Ram, JJ Dudley, JE Bowers, L Yang, K Carey, SJ Rosner, K Nauka Journal of Applied Physics 78 (6), 4227-4237, 1995 | 107 | 1995 |
| Unusual properties of photoluminescence from partially ordered Ga0. 5In0. 5P JE Fouquet, VM Robbins, SJ Rosner, O Blum Applied physics letters 57 (15), 1566-1568, 1990 | 92 | 1990 |
| Limited reaction processing: growth of Si1− xGex/Si for heterojunction bipolar transistor applications JL Hoyt, CA King, DB Noble, CM Gronet, JF Gibbons, MP Scott, ... Thin Solid Films 184 (1-2), 93-106, 1990 | 87 | 1990 |
| Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer H Marchand, N Zhang, L Zhao, Y Golan, SJ Rosner, G Girolami, PT Fini, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1999 | 85 | 1999 |
| The growth of GaAs on Si by MBE SM Koch, SJ Rosner, R Hull, GW Yoffe, JS Harris Jr Journal of Crystal Growth 81 (1-4), 205-213, 1987 | 65 | 1987 |
| High-brightness AlGaInN light-emitting diodes MR Krames, G Christenson, D Collins, LW Cook, MG Craford, A Edwards, ... Light-Emitting Diodes: Research, Manufacturing, and Applications IV 3938, 2-12, 2000 | 60 | 2000 |
| Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures A Fischer‐Colbrie, JN Miller, SS Laderman, SJ Rosner, R Hull Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988 | 60 | 1988 |
| High-efficiency InGaN MQW blue and green LEDs SD Lester, MJ Ludowise, KP Killeen, BH Perez, JN Miller, SJ Rosner Journal of crystal growth 189, 786-789, 1998 | 58 | 1998 |
| Effect of substrate surface structure on nucleation of GaAs on Si (100) R Hull, A Fischer‐Colbrie, SJ Rosner, SM Koch, JS Harris Applied physics letters 51 (21), 1723-1725, 1987 | 55 | 1987 |
| Microstructure of biepitaxial grain boundary junctions in YBa2Cu3O7 SJ Rosner, K Char, G Zaharchuk Applied physics letters 60 (8), 1010-1012, 1992 | 50 | 1992 |
| Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing DB Noble, JL Hoyt, JF Gibbons, MP Scott, SS Laderman, SJ Rosner, ... Applied physics letters 55 (19), 1978-1980, 1989 | 46 | 1989 |
| Failure mode analysis of oxide VCSELs in high humidity and high temperature S Xie, RW Herrick, D Chamberlin, SJ Rosner, S McHugo, G Girolami, ... Journal of lightwave technology 21 (4), 1013, 2003 | 44 | 2003 |
| Photoluminescence excitation spectroscopy yields band gap of Ga0. 5In0. 5P containing relatively ordered domains JE Fouquet, MS Minsky, SJ Rosner Applied physics letters 63 (23), 3212-3214, 1993 | 40 | 1993 |
James S. Harris, Jr.Professor of Electrical Engineering, Stanford University在 stanford.edu 的电子邮件经过验证
