| Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt VK Kyazimova, ZM Zeynalov, ZM Zakhrabekova, GK Azhdarov Crystallography Reports 51, S192-S195, 2006 | 24 | 2006 |
| Segregation of aluminum and indium impurities in Ge1−x Si x crystals ZM Zakhrabekova, ZM Zeinalov, VK Kyazimova, GK Azhdarov Inorganic Materials 43, 3-7, 2007 | 14 | 2007 |
| СЕГРЕГАЦИЯ ПРИМЕСЕЙ Al И In В КРИСТАЛЛАХ Ge1 – xSix ЗМ Захрабекова, ЗМ Зейналов, ВК Кязимова, ГХ Аждаров Неорганические материалы 43 (1), 5-9, 2007 | 12 | 2007 |
| Deep donor center in Ge1 − x Si x <Cu,In,Sb> crystals at 1050–1080 K GK Azhdarov, ZM Zeynalov, VK Kyazimova, LA Huseynli Inorganic Materials 46, 1285-1289, 2010 | 3 | 2010 |
| Modeling the concentration profiles of aluminum and indium impurities in crystals of germanium–silicon solid solutions ZA Agamaliev, ZM Zakhrabekova, VK Kyazimova, GK Azhdarov Inorganic Materials 52, 244-247, 2016 | 1 | 2016 |
| Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod VK Kyazimova, AI Alekperov, ZM Zakhrabekova, GK Azhdarov Crystallography Reports 59, 415-417, 2014 | 1 | 2014 |
| МОДЕЛИРОВАНИЕ КОНЦЕНТРАЦИОННЫХ ПРОФИЛЕЙ ПРИМЕСЕЙ АЛЮМИНИЯ И ИНДИЯ В КРИСТАЛЛАХ ТВЕРДЫХ РАСТВОРОВ Ge-Si ЗА Агамалиев, ЗМ Захрабекова, ВК Кязимова, ГХ Аждаров Неорганические материалы 52 (3), 285-288, 2016 | | 2016 |
| РАСПРЕДЕЛЕНИЕ ПРИМЕСЕЙ Al И In ВДОЛЬ ОДНОРОДНЫХ КРИСТАЛЛОВ Ge-Si, ВЫРАЩЕННЫХ ИЗ РАСПЛАВА, ПОДПИТЫВАЕМОГО КРЕМНИЕМ, МЕТОДОМ ЧОХРАЛЬСКОГО ВК Кязимова, АИ Алекперов, ЗМ Захрабекова, ГХ Аждаров Кристаллография 59 (3), 460-460, 2014 | | 2014 |
| Conditions for growing fully uniform InAs-GaAs single crystals from the melt fed by the second component; Usloviya rosta odnorodnykh monokristallov InAs-GaAs iz rasplava … PG Ajdarov, VK Kazymova, MA Akperov, AI Alekperov Transactions of Azerbaijan National Academy of Sciences. Series of Physical …, 2013 | | 2013 |
| The influence of molten zone length on component axial distribution in InAs-GaAs ingots at floating-zone refining SM Bagirova, ZM Zakhrabekova, VK Kazimova, GH Ajdarov Fizika (Baku) 18, 2012 | | 2012 |
| Growing conditions of fully uniform InAs-GaAs solid solution single crystals by double feeding of the melt method PG Ajdarov, VK Kazymova, MA Akperov, AI Alekperov Transactions of Azerbaijan National Academy of Sciences. Series of Physical …, 2012 | | 2012 |
| Deep donor center in complexly-doped Ge-Si-Cu, In, Sb-crystals; Glubokiy donorniy kompleks v slojnolegirovannykh kristallakh Ge-Si-Cu, In, Sb VK Kazimova, GK Ajdarov Izvestiya Akademii Nauk Azerbajdzhanskoj SSR. Seriya Fiziko-Tekhnicheskikh i …, 2008 | | 2008 |
| Deep donor center in complexly-doped Ge-Si-Cu, In, Sb-crystals VK Kazimova, GK Ajdarov Izvestiya Akademii Nauk Azerbajdzhanskoj SSR. Seriya Fiziko-Tekhnicheskikh i …, 2008 | | 2008 |
| Concentration profile of the shallow acceptor impurities in the crystals Ge-Si, raised by modernized Bridgman method; Kontsentratsionniy profil melkikh aktseptornykh primesey v … GX Ajdarov, ZM Zakhrabekova, VK Kyazymova, LA Gubatova | | 2005 |
| Perspectives of Double Feeding of the Melt Method on the Example of the Analysis of the InAs (1-x)–GaAs (x) Solid Solution Crystals Growth Z Zakhrabekova, V Kazimova, E Islamzade, A Alekperov | | |
| FİZİKA 2005 CİLD XΙ № 3 VK KAZIMOVA, ZM ZEYNALOV, GH AJDAROV | | |
| Beynəlxalq Konfrans “Fizika-2005” ГХ АЖДАРОВ, ЗМ ЗАХРАБЕКОВА, ВК КЯЗИМОВА, ЛА ГУБАТОВА | | |
Gusnu AzhdarovANAS Institute of Physics在 physics.ab.az 的电子邮件经过验证
Gusnu AzhdarovANAS Institute of Physics在 physics.ab.az 的电子邮件经过验证
Zohrab AghamaliyevAssociate Professor, Baku State University在 physics.ab.az 的电子邮件经过验证