| A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 2011 | 169 | 2011 |
| Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ... Applied Physics Letters 94 (10), 2009 | 128 | 2009 |
| Poly (9, 9-dioctylfluorene) nanowires with pronounced β-phase morphology: synthesis, characterization, and optical properties D O'Carroll, D Iacopino, A O'Riordan, P Lovera, É O'Connor, GA O'Brien, ... Advanced Materials 20 (1), 42-48, 2008 | 127 | 2008 |
| Low-Loss BaTiO3–Si Waveguides for Nonlinear Integrated Photonics F Eltes, D Caimi, F Fallegger, M Sousa, E O’Connor, MD Rossell, ... Acs Photonics 3 (9), 1698-1703, 2016 | 123 | 2016 |
| Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays É O’Connor, A O’Riordan, H Doyle, S Moynihan, A Cuddihy, G Redmond Applied physics letters 86 (20), 2005 | 77 | 2005 |
| In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ... Applied Physics Letters 92 (2), 2008 | 71 | 2008 |
| Near infrared electroluminescence from neodymium complex–doped polymer light emitting diodes A O'Riordan, E O'Connor, S Moynihan, P Nockemann, P Fias, ... Thin Solid Films 497 (1-2), 299-303, 2006 | 69 | 2006 |
| An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ... Journal of Applied Physics 114 (14), 2013 | 65 | 2013 |
| Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley Applied Physics Letters 99 (21), 2011 | 65 | 2011 |
| Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ... Applied Physics Letters 97 (5), 2010 | 64 | 2010 |
| Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ... Institute of Electrical and Electronics Engineers (IEEE), 2012 | 63 | 2012 |
| Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ... Journal of the Electrochemical Society 155 (2), G13, 2007 | 62 | 2007 |
| Stabilization of ferroelectric HfxZr1− xO2 films using a millisecond flash lamp annealing technique É O’Connor, M Halter, F Eltes, M Sousa, A Kellock, S Abel, J Fompeyrine Apl Materials 6 (12), 2018 | 58 | 2018 |
| Narrow bandwidth red electroluminescence from solution-processed lanthanide-doped polymer thin films A O'Riordan, E O'Connor, S Moynihan, X Llinares, R Van Deun, P Fias, ... Thin Solid Films 491 (1-2), 264-269, 2005 | 58 | 2005 |
| The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ... IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013 | 55 | 2013 |
| Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, M Sousa, ... 2015 IEEE International Electron Devices Meeting (IEDM), 8.8. 1-8.8. 4, 2015 | 47 | 2015 |
| Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 41 | 2011 |
| Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ... ECS transactions 25 (6), 113, 2009 | 36 | 2009 |
| Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al2O3 and HfO2 VV Afanas’ev, M Badylevich, A Stesmans, G Brammertz, A Delabie, ... Applied Physics Letters 93 (21), 2008 | 36 | 2008 |
| Growth and characterisation of thin MgO layers on Si (100) surfaces P Casey, G Hughes, E O'connor, RD Long, PK Hurley Journal of Physics: Conference Series 100 (4), 042046, 2008 | 35 | 2008 |
