Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ... Applied Physics Letters 82 (8), 1212-1214, 2003 | 162 | 2003 |
Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation O Herre, W Wesch, E Wendler, PI Gaiduk, FF Komarov, S Klaumünzer, ... Physical Review B 58 (8), 4832, 1998 | 105 | 1998 |
Chemical bath deposition of PbS nanocrystals: Effect of substrate AP Gaiduk, PI Gaiduk, AN Larsen Thin Solid Films 516 (12), 3791-3795, 2008 | 104 | 2008 |
Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density PI Gaiduk, AN Larsen, JL Hansen Thin Solid Films 367 (1-2), 120-125, 2000 | 70 | 2000 |
Damage evolution in crystalline InP during irradiation with swift Xe ions PI Gaiduk, FF Komarov, W Wesch Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000 | 61 | 2000 |
Ion mass and temperature dependence of damage production in ion implanted InP E Wendler, T Opfermann, PI Gaiduk Journal of applied physics 82 (12), 5965-5975, 1997 | 61 | 1997 |
Discontinuous tracks in arsenic-doped crystalline Si 0.5 Ge 0.5 alloy layers PI Gaiduk, AN Larsen, C Trautmann, M Toulemonde Physical Review B 66 (4), 045316, 2002 | 51 | 2002 |
Damage formation in InP due to high electronic excitation by swift heavy ions W Wesch, O Herre, PI Gaiduk, E Wendler, S Klaumünzer, P Meier Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998 | 47 | 1998 |
Discontinuous tracks in relaxed alloy layers: A velocity effect PI Gaiduk, AN Larsen, JL Hansen, C Trautmann, M Toulemonde Applied physics letters 83 (9), 1746-1748, 2003 | 38 | 2003 |
Track formation in germanium crystals irradiated with superhigh-energy ions FF Komarov, PI Gaiduk, LA Vlasukova, AJ Didyk, VN Yuvchenko Vacuum 70 (2-3), 75-79, 2003 | 35 | 2003 |
Wurtzite InP formation during swift Xe-ion irradiation PI Gaiduk, FF Komarov, VS Tishkov, W Wesch, E Wendler Physical Review B 61 (23), 15785, 2000 | 35 | 2000 |
Nanovoids in MBE-grown SiGe alloys implanted in situ with Ge+ ions PI Gaiduk, JL Hansen, AN Larsen, EA Steinman Physical Review B 67 (23), 235310, 2003 | 34 | 2003 |
Structural and sensing properties of nanocrystalline SnO2 films deposited by spray pyrolysis from a SnCl2 precursor PI Gaiduk, AN Kozjevko, SL Prokopjev, C Tsamis, A Nylandsted Larsen Applied Physics A 91, 667-670, 2008 | 27 | 2008 |
Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method MV Malashchonak, ЕА Streltsov, AV Mazanik, AI Kulak, SK Poznyak, ... Thin Solid Films 589, 145-152, 2015 | 26 | 2015 |
Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation F Komarov, P Gaiduk, A Kamarou Vacuum 63 (4), 657-663, 2001 | 25 | 2001 |
Iron distribution in the implanted silicon under the action of high-power pulsed ion and laser beams R Bayazitov, R Batalov, R Nurutdinov, V Shustov, P Gaiduk, I Dezsi, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005 | 22 | 2005 |
Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures PI Gaiduk, AN Larsen, JL Hansen, E Wendler, W Wesch Physical Review B 67 (23), 235311, 2003 | 22 | 2003 |
Si self-interstitial injection from Sb complex formation in Si J Fage-Pedersen, P Gaiduk, J Lundsgaard Hansen, A Nylandsted Larsen Journal of Applied Physics 88 (6), 3254-3259, 2000 | 22 | 2000 |
Rapid thermal annealing of arsenic‐implanted Si0.6Ge0.4 alloys: Temperature effects VS Tishkov, PI Gaiduk, SY Shiryaev, A Nylandsted Larsen Applied physics letters 68 (5), 655-657, 1996 | 22 | 1996 |
Ionisation stimulated defect annealing in GaAs and InP W Wesch, A Kamarou, E Wendler, K Gärtner, PI Gaiduk, S Klaumünzer Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003 | 21 | 2003 |