| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1104 | 2018 |
| Prospects of III-nitride optoelectronics grown on Si D Zhu, DJ Wallis, CJ Humphreys Reports on Progress in Physics 76 (10), 106501, 2013 | 381 | 2013 |
| Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices A Sarua, H Ji, KP Hilton, DJ Wallis, MJ Uren, T Martin, M Kuball IEEE Transactions on electron devices 54 (12), 3152-3158, 2007 | 354 | 2007 |
| Dissolution of different forms of partially porous silicon wafers under simulated physiological conditions SHC Anderson, H Elliott, DJ Wallis, LT Canham, JJ Powell physica status solidi (a) 197 (2), 331-335, 2003 | 266 | 2003 |
| Medium-range order in silica, the canonical network glass PH Gaskell, DJ Wallis Physical review letters 76 (1), 66, 1996 | 236 | 1996 |
| 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications S Datta, T Ashley, J Brask, L Buckle, M Doczy, M Emeny, D Hayes, ... Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International …, 2005 | 192 | 2005 |
| Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ... IEEE Electron Device Letters 28 (2), 86-89, 2007 | 171 | 2007 |
| Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications T Ashley, L Buckle, S Datta, MT Emeny, DG Hayes, KP Hilton, R Jefferies, ... Electronics Letters 43 (14), 777-779, 2007 | 161 | 2007 |
| High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ... Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008 | 148 | 2008 |
| EELS in the STEM: Determination of materials properties on the atomic scale ND Browning, DJ Wallis, PD Nellist, SJ Pennycook Micron 28 (5), 333-348, 1997 | 137 | 1997 |
| An Organic Down‐Converting Material for White‐Light Emission from Hybrid LEDs NJ Findlay, J Bruckbauer, AR Inigo, B Breig, S Arumugam, DJ Wallis, ... Advanced Materials 26 (43), 7290-7294, 2014 | 131 | 2014 |
| Analysis of DC–RF dispersion in AlGaN/GaN HFETs using RF waveform engineering C Roff, J Benedikt, PJ Tasker, DJ Wallis, KP Hilton, JO Maclean, ... IEEE Transactions on Electron Devices 56 (1), 13-19, 2008 | 112 | 2008 |
| A novel route to aligned nanotubes and nanofibres using laser-patterned catalytic substrates N Grobert, M Terrones, S Trasobares, K Kordatos, H Terrones, J Olivares, ... Applied Physics A: Materials Science & Processing 70 (2), 175-183, 2000 | 103 | 2000 |
| Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ... IEEE Electron Device Letters 30 (2), 103-106, 2008 | 98 | 2008 |
| Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing AJ Trindade, B Guilhabert, EY Xie, R Ferreira, JJD McKendry, D Zhu, ... Optics Express 23 (7), 9329-9338, 2015 | 75 | 2015 |
| X-ray diffraction analysis of cubic zincblende III-nitrides M Frentrup, LY Lee, SL Sahonta, MJ Kappers, F Massabuau, P Gupta, ... J. Phys. D: Appl. Phys 50 (433002), 13pp, 2017 | 69 | 2017 |
| GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE D Zhu, C McAleese, KK McLaughlin, M Häberlen, CO Salcianu, EJ Thrush, ... SPIE OPTO: Integrated Optoelectronic Devices, 723118-723118-11, 2009 | 63 | 2009 |
| Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ... IEEE Electron Device Letters 29 (5), 416-418, 2008 | 62 | 2008 |
| Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates D Zhu, C McAleese, M Häberlen, C Salcianu, T Thrush, M Kappers, ... Journal of applied physics 109 (1), 014502, 2011 | 59 | 2011 |
| Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy JW Pomeroy, M Kuball, DJ Wallis, AM Keir, KP Hilton, RS Balmer, ... Applied Physics Letters 87 (10), 103508-103508-3, 2005 | 55 | 2005 |
Colin HumphreysQueen Mary University of London在 qmul.ac.uk 的电子邮件经过验证
