Fully hardware-implemented memristor convolutional neural network P Yao, H Wu, B Gao, J Tang, Q Zhang, W Zhang, JJ Yang, H Qian Nature 577 (7792), 641-646, 2020 | 1653 | 2020 |
Face classification using electronic synapses P Yao, H Wu, B Gao, SB Eryilmaz, X Huang, W Zhang, Q Zhang, N Deng, ... Nature communications 8 (1), 15199, 2017 | 875 | 2017 |
Bridging biological and artificial neural networks with emerging neuromorphic devices: fundamentals, progress, and challenges J Tang, F Yuan, X Shen, Z Wang, M Rao, Y He, Y Sun, X Li, W Zhang, Y Li, ... Advanced Materials 31 (49), 1902761, 2019 | 553 | 2019 |
Neuro-inspired computing chips W Zhang, B Gao, J Tang, P Yao, S Yu, MF Chang, HJ Yoo, H Qian, H Wu Nature electronics 3 (7), 371-382, 2020 | 540 | 2020 |
A low energy oxide‐based electronic synaptic device for neuromorphic visual systems with tolerance to device variation S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong Advanced Materials 25 (12), 1774-1779, 2013 | 539 | 2013 |
Understanding memristive switching via in situ characterization and device modeling W Sun, B Gao, M Chi, Q Xia, JJ Yang, H Qian, H Wu Nature communications 10 (1), 3453, 2019 | 383 | 2019 |
A HfOx Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture S Yu, HY Chen, B Gao, J Kang, HSP Wong ACS nano, 2013 | 379 | 2013 |
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong 2012 international electron devices meeting, 20.7. 1-20.7. 4, 2012 | 374 | 2012 |
A compute-in-memory chip based on resistive random-access memory W Wan, R Kubendran, C Schaefer, SB Eryilmaz, W Zhang, D Wu, S Deiss, ... Nature 608 (7923), 504-512, 2022 | 372 | 2022 |
Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing Y Zhong, J Tang, X Li, B Gao, H Qian, H Wu Nature communications 12 (1), 408, 2021 | 316 | 2021 |
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu Applied Physics Letters 98 (4), 2011 | 269 | 2011 |
Reliability of analog resistive switching memory for neuromorphic computing M Zhao, B Gao, J Tang, H Qian, H Wu Applied Physics Reviews 7 (1), 2020 | 251 | 2020 |
Binary neural network with 16 Mb RRAM macro chip for classification and online training S Yu, Z Li, PY Chen, H Wu, B Gao, D Wang, W Wu, H Qian 2016 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2016 | 246 | 2016 |
Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer W Wu, H Wu, B Gao, N Deng, S Yu, H Qian IEEE Electron Device Letters 38 (8), 1019-1022, 2017 | 236 | 2017 |
A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong 2012 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2012 | 231 | 2012 |
33.2 A fully integrated analog ReRAM based 78.4 TOPS/W compute-in-memory chip with fully parallel MAC computing Q Liu, B Gao, P Yao, D Wu, J Chen, Y Pang, W Zhang, Y Liao, CX Xue, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 500-502, 2020 | 228 | 2020 |
A physics-based compact model of metal-oxide-based RRAM DC and AC operations P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ... IEEE transactions on electron devices 60 (12), 4090-4097, 2013 | 213 | 2013 |
Ionic doping effect in ZrO resistive switching memory H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ... Applied Physics Letters 96, 123502, 2010 | 211 | 2010 |
Alloying conducting channels for reliable neuromorphic computing H Yeon, P Lin, C Choi, SH Tan, Y Park, D Lee, J Lee, F Xu, B Gao, H Wu, ... Nature Nanotechnology 15 (7), 574-579, 2020 | 206 | 2020 |
Unified physical model of bipolar oxide-based resistive switching memory B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu IEEE Electron Device Letters 30 (12), 1326-1328, 2009 | 205 | 2009 |