| Sodium carboxymethyl cellulose: a potential binder for Si negative electrodes for Li-ion batteries J Li, RB Lewis, JR Dahn Electrochemical and Solid-State Letters 10 (2), A17, 2006 | 754 | 2006 |
| Molecular beam epitaxy: from research to mass production M Henini Newnes, 2012 | 275 | 2012 |
| Composition dependence of photoluminescence of GaAs(1−x)Bi(x) alloys X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang Applied Physics Letters 95 (4), 041903-041903-3, 2009 | 221 | 2009 |
| Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs(1−x)Bi(x) X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick Applied Physics Letters 92 (19), 192110-192110-3, 2008 | 212 | 2008 |
| Growth of high Bi concentration GaAs(1-x)Bi(x) by molecular beam epitaxy RB Lewis, M Masnadi-Shirazi, T Tiedje Applied Physics Letters 101 (8), 082112-082112-4, 2012 | 195 | 2012 |
| Nanoplasmonic terahertz photoconductive switch on GaAs B Heshmat, H Pahlevaninezhad, Y Pang, M Masnadi-Shirazi, ... Nano letters 12 (12), 6255-6259, 2012 | 122 | 2012 |
| GaAs(1−x)Bi(x) light emitting diodes RB Lewis, DA Beaton, X Lu, T Tiedje Journal of Crystal Growth 311 (7), 1872-1875, 2009 | 109 | 2009 |
| Recombination mechanisms and band alignment of GaAs(1-x)Bi(x)/GaAs light emitting diodes N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ... Applied Physics Letters 100 (5), 051105-051105-3, 2012 | 77 | 2012 |
| Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8% M Masnadi-Shirazi, RB Lewis, V Bahrami-Yekta, T Tiedje, M Chicoine, ... Journal of Applied Physics 116 (22), 2014 | 74 | 2014 |
| In situ AFM measurements of the expansion and contraction of amorphous Sn-Co-C films reacting with lithium RB Lewis, A Timmons, RE Mar, JR Dahn Journal of the Electrochemical Society 154 (3), A213, 2007 | 71 | 2007 |
| Temperature dependence of hole mobility in GaAs(1−x)Bi(x) alloys DA Beaton, RB Lewis, M Masnadi-Shirazi, T Tiedje Journal of Applied Physics 108 (8), 083708-083708-4, 2010 | 67 | 2010 |
| Surface reconstructions during growth of GaAs(1−x)Bi(x) alloys by molecular beam epitaxy M Masnadi-Shirazi, DA Beaton, RB Lewis, X Lu, T Tiedje Journal of Crystal Growth 338 (1), 80-84, 2012 | 62 | 2012 |
| Diameter evolution of selective area grown Ga-assisted GaAs nanowires H Küpers, RB Lewis, A Tahraoui, M Matalla, O Krüger, F Bastiman, ... Nano Research 11, 2885-2893, 2018 | 55 | 2018 |
| Deep level defects in n-type GaAsBi and GaAs grown at low temperatures PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ... Journal of Applied Physics 113 (13), 2013 | 53 | 2013 |
| Anomalous strain relaxation in core–shell nanowire heterostructures via simultaneous coherent and incoherent growth RB Lewis, L Nicolai, H Küpers, M Ramsteiner, A Trampert, L Geelhaar Nano Letters 17 (1), 136-142, 2017 | 52 | 2017 |
| Nanowires bending over backward from strain partitioning in asymmetric core–shell heterostructures RB Lewis, P Corfdir, H Küpers, T Flissikowski, O Brandt, L Geelhaar Nano letters 18 (4), 2343-2350, 2018 | 45 | 2018 |
| Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si (111) H Küpers, A Tahraoui, RB Lewis, S Rauwerdink, M Matalla, O Krüger, ... Semiconductor Science and Technology 32 (11), 115003, 2017 | 32 | 2017 |
| Quantum dot self-assembly driven by a surfactant-induced morphological instability RB Lewis, P Corfdir, H Li, J Herranz, C Pfüller, O Brandt, L Geelhaar Physical Review Letters 119 (086101), 2017 | 26 | 2017 |
| Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources B Heshmat, M Masnadi‐Shirazi, RB Lewis, J Zhang, T Tiedje, R Gordon, ... Advanced Optical Materials 1 (10), 714-719, 2013 | 25 | 2013 |
| Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant RB Lewis, P Corfdir, J Herranz, H Küpers, U Jahn, O Brandt, L Geelhaar Nano Letters 17, 4255−4260, 2017 | 24 | 2017 |
