| Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2 C Han, KR Kwon, J Kim, J Yim, S Kim, EC Park, JW You, S Jeong, R Choi, ... Materials Science in Semiconductor Processing 160, 107401, 2023 | 7 | 2023 |
| Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2 C Han, SJ Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ... IEEE Transactions on Electron Devices 69 (6), 3499-3502, 2022 | 6 | 2022 |
| All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel S Jeong, C Han, J Yim, J Kim, KR Kwon, S Kim, EC Park, JW You, R Choi, ... IEEE Electron Device Letters 44 (5), 749-752, 2023 | 5 | 2023 |
| Ferroelectric polarization-switching acceleration of sputtered Hf0. 5Zr0. 5O2 with defect-induced polarization of interlayer C Han, J Yim, A Nguyen, J Kim, KR Kwon, S Kim, S Jeong, EC Park, ... Journal of Alloys and Compounds 960, 170516, 2023 | 2 | 2023 |
| Corrigendum to “Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2”[Mater. Sci. Semicond. Process. 160 (2023) 107401] C Han, KR Kwon, J Kim, J Yim, S Kim, EC Park, JW You, S Jeong, R Choi, ... Materials Science in Semiconductor Processing 160, 107465, 2023 | | 2023 |
| Analysis on Degradation of Ferroelectric Memory S Kim, J Kim, S Jeong, K Kwon, C Han, E Park, J Yim, B Kwak, J You, ... 한국차세대컴퓨팅학회 학술대회, 212-213, 2022 | | 2022 |
