| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018 | 403 | 2018 |
| Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011 | 207 | 2011 |
| Delta-doped β-gallium oxide field-effect transistor S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan Applied Physics Express 10 (5), 051102, 2017 | 172 | 2017 |
| Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571, 2018 | 155 | 2018 |
| AlGaN channel field effect transistors with graded heterostructure ohmic contacts S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan Applied Physics Letters 109 (13), 2016 | 101 | 2016 |
| Density-dependent electron transport and precise modeling of GaN high electron mobility transistors S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ... Applied Physics Letters 107 (15), 2015 | 96 | 2015 |
| Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017 | 94 | 2017 |
| Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018 | 90 | 2018 |
| Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage S Bajaj, TH Hung, F Akyol, D Nath, S Rajan Applied Physics Letters 105 (26), 2014 | 82 | 2014 |
| Tunnel-injected sub-260 nm ultraviolet light emitting diodes Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ... Applied Physics Letters 110 (20), 2017 | 78 | 2017 |
| High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ... IEEE Electron Device Letters 39 (2), 256-259, 2017 | 68 | 2017 |
| Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation SH Sohel, MW Rahman, A Xie, E Beam, Y Cui, M Kruzich, H Xue, ... IEEE Electron Device Letters 41 (1), 19-22, 2019 | 52 | 2019 |
| X-band power and linearity performance of compositionally graded AlGaN channel transistors SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ... IEEE Electron Device Letters 39 (12), 1884-1887, 2018 | 43 | 2018 |
| Polarization engineering of AlGaN/GaN HEMT with graded InGaN sub-channel for high-linearity X-band applications SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, Y Cao, C Lee, W Lu, ... IEEE Electron Device Letters 40 (4), 522-525, 2019 | 38 | 2019 |
| Ultra-wide band gap AlGaN polarization-doped field effect transistor AM Armstrong, BA Klein, A Colon, AA Allerman, EA Douglas, AG Baca, ... Japanese Journal of Applied Physics 57 (7), 074103, 2018 | 34 | 2018 |
| BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ... Applied Physics Letters 116 (2), 2020 | 32 | 2020 |
| Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors T Razzak, S Hwang, A Coleman, H Xue, SH Sohel, S Bajaj, Y Zhang, ... Applied Physics Letters 115 (4), 2019 | 30 | 2019 |
| Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors JB Khurgin, S Bajaj, S Rajan Applied Physics Express 9 (9), 094101, 2016 | 30 | 2016 |
| Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs PS Park, S Krishnamoorthy, S Bajaj, DN Nath, S Rajan IEEE Electron Device Letters 36 (3), 226-228, 2015 | 28 | 2015 |
| RF operation in graded AlxGa1−xN (x = 0.65 to 0.82) channel transistors T Razzak, S Hwang, A Coleman, S Bajaj, H Xue, Y Zhang, ... Electronics Letters 54 (23), 1351-1353, 2018 | 21 | 2018 |
Siddharth RajanElectrical and Computer Engineering, Ohio State University在 ece.osu.edu 的电子邮件经过验证
