| Novel 4F2 Buried-Source-Line STT MRAM Cell With Vertical GAA Transistor as Select Device S Verma, S Kaundal, BK Kaushik IEEE Transactions on Nanotechnology 13 (6), 1163-1171, 2014 | 21 | 2014 |
| Design and structural optimization of junctionless FinFET with Gaussian-doped channel S Kaundal, AK Rana Journal of Computational Electronics 17, 637-645, 2018 | 14 | 2018 |
| Threshold voltage modeling for a Gaussian-doped junctionless FinFET S Kaundal, AK Rana Journal of Computational Electronics 18, 83-90, 2019 | 11 | 2019 |
| Evaluation of statistical variability and parametric sensitivity of non-uniformly doped Junctionless FinFET S Kaundal, AK Rana Microelectronics Reliability 91, 298-305, 2018 | 10 | 2018 |
| Modeling of in-plane magnetic tunnel junction for mixed mode simulations S Verma, S Kaundal, BK Kaushik IEEE Transactions on Magnetics 50 (8), 1-7, 2014 | 8 | 2014 |
| A review of junctionless transistor technology and its challenges S Kaundal, AK Rana Journal of Nanoelectronics and Optoelectronics 14 (3), 310-320, 2019 | 7 | 2019 |
| Performance estimation of junctionless FinFET with graded channel design S Kaundal, S Kaushal, AK Rana 2017 4th International Conference on Signal Processing, Computing and …, 2017 | 7 | 2017 |
| Impact of spacer configuration on negative capacitance multi gate junctionless FET S Kaushal, S Kaundal, AK Rana 2021 International Conference on Computer Communication and Informatics …, 2021 | 5 | 2021 |
| Physical insights on scaling of Gaussian channel design junctionless FinFET S Kaundal, AK Rana Journal of Nanoelectronics and Optoelectronics 13 (5), 653-660, 2018 | 4 | 2018 |
| Impact of Gaussian Doping on SRAM Cell Stability in 14nm Junctionless FinFET Technology S Kaundal, AK Rana Silicon, 1-9, 2022 | 1 | 2022 |
| Analysis of 10 nm Strained Channel Double Gate Ultra-Thin Body Junctionless MOSFET S Kaundal Journal of Electronics and Informatics 6 (3), 262-269, 2024 | | 2024 |
| Stability Analysis of JL FinFET based 6T SRAM cell S Kaundal, AK Rana IOP Conference Series: Materials Science and Engineering 1033 (1), 012066, 2021 | | 2021 |
| Impact of oxide thickness variation on the performance of junctionless FinFET S Kaundal, AK Rana VLSI and Post-CMOS Electronics: Devices, circuits and interconnects 2, 87, 2019 | | 2019 |
| Reduced Gate Oxide Leakage Current in Junctionless FinFET S Kaundal, AK Rana 2018 International Conference on Advances in Computing, Communication …, 2018 | | 2018 |
Ashwani Kumar RanaAssociate Professor, NIT Hamirpur在 nith.ac.in 的电子邮件经过验证
