Anomalous double-layer step formation on Si (100) in hydrogen process ambient S Brückner, H Döscher, P Kleinschmidt, O Supplie, A Dobrich, ... Physical Review B—Condensed Matter and Materials Physics 86 (19), 195310, 2012 | 66 | 2012 |
Time-resolved in situ spectroscopy during formation of the GaP/Si (100) heterointerface O Supplie, MM May, G Steinbach, O Romanyuk, F Grosse, A Nägelein, ... The journal of physical chemistry letters 6 (3), 464-469, 2015 | 51 | 2015 |
Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory O Supplie, S Brückner, O Romanyuk, H Döscher, C Höhn, MM May, ... Physical Review B 90 (23), 235301, 2014 | 48 | 2014 |
Surface preparation of Si (1 0 0) by thermal oxide removal in a chemical vapor environment H Döscher, S Brückner, A Dobrich, C Höhn, P Kleinschmidt, T Hannappel Journal of Crystal Growth 315 (1), 10-15, 2011 | 48 | 2011 |
In situ investigation of hydrogen interacting with Si (100) S Brückner, H Döscher, P Kleinschmidt, T Hannappel Applied Physics Letters 98 (21), 2011 | 46 | 2011 |
Indirect in situ characterization of Si (1 0 0) substrates at the initial stage of III–V heteroepitaxy H Döscher, O Supplie, S Brückner, T Hannappel, A Beyer, J Ohlmann, ... Journal of Crystal Growth 315 (1), 16-21, 2011 | 45 | 2011 |
Domain-sensitive in situ observation of layer-by-layer removal at Si (100) in H2 ambient S Brückner, P Kleinschmidt, O Supplie, H Döscher, T Hannappel New Journal of Physics 15 (11), 113049, 2013 | 39 | 2013 |
In situ controlled heteroepitaxy of single-domain GaP on As-modified Si (100) O Supplie, MM May, P Kleinschmidt, A Nägelein, A Paszuk, S Brückner, ... Apl Materials 3 (12), 2015 | 35 | 2015 |
In situ characterization of interfaces relevant for efficient photoinduced reactions O Supplie, MM May, S Brückner, N Brezhneva, T Hannappel, EV Skorb Advanced Materials Interfaces 4 (21), 1601118, 2017 | 31 | 2017 |
Investigation of oxide removal from Si (1 0 0) substrates in dependence of the MOVPE process gas ambient H Döscher, S Brückner, T Hannappel Journal of crystal growth 318 (1), 563-569, 2011 | 31 | 2011 |
Si (100) surfaces in a hydrogen-based process ambient H Döscher, A Dobrich, S Brückner, P Kleinschmidt, T Hannappel Applied Physics Letters 97 (15), 2010 | 31 | 2010 |
MOVPE growth of III-V solar cells on silicon in 300 mm closed coupled showerhead reactor T Roesener, H Döscher, A Beyer, S Brückner, V Klinger, A Wekkeli, ... 25th European Photovoltaic Solar Energy Conf. and Exhibition, 964-968, 2010 | 27 | 2010 |
Formation of GaP/Si (100) heterointerfaces in the presence of inherent reactor residuals O Supplie, MM May, C Höhn, H Stange, A Müller, P Kleinschmidt, ... ACS applied materials & interfaces 7 (18), 9323-9327, 2015 | 24 | 2015 |
In situ control of As dimer orientation on Ge (100) surfaces S Brückner, O Supplie, E Barrigón, J Luczak, P Kleinschmidt, I Rey-Stolle, ... Applied Physics Letters 101 (12), 2012 | 24 | 2012 |
Control Over Dimer Orientations on Vicinal Si (100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics S Brückner, O Supplie, A Dobrich, P Kleinschmidt, T Hannappel physica status solidi (b) 255 (4), 1700493, 2018 | 23 | 2018 |
Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si (111) for subsequent III-V nanowire growth A Paszuk, S Brückner, M Steidl, W Zhao, A Dobrich, O Supplie, ... Applied Physics Letters 106 (23), 2015 | 22 | 2015 |
Double-layer stepped Si (1 0 0) surfaces prepared in As-rich CVD ambience A Paszuk, O Supplie, M Nandy, S Brückner, A Dobrich, P Kleinschmidt, ... Applied Surface Science 462, 1002-1007, 2018 | 18 | 2018 |
GaAsP/Si tandem solar cells: In situ study on GaP/Si: As virtual substrate preparation A Paszuk, O Supplie, B Kim, S Brückner, M Nandy, A Heinisch, ... Solar Energy Materials and Solar Cells 180, 343-349, 2018 | 17 | 2018 |
In situ study of Ge (100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient E Barrigón, S Brückner, O Supplie, H Döscher, I Rey-Stolle, T Hannappel Journal of crystal growth 370, 173-176, 2013 | 15 | 2013 |
Analysis of the Si (111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy W Zhao, M Steidl, A Paszuk, S Brückner, A Dobrich, O Supplie, ... Applied Surface Science 392, 1043-1048, 2017 | 14 | 2017 |