关注
Takayuki Kawahara
Takayuki Kawahara
在 ee.kagu.tus.ac.jp 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Semiconductor device
K Osada, T Kawahara
US Patent 7,336,526, 2008
411*2008
Spin-transfer torque RAM technology: Review and prospect
T Kawahara, K Ito, R Takemura, H Ohno
Microelectronics Reliability 52 (4), 613-627, 2012
4102012
2Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read
T Kawahara, R Takemura, K Miura, J Hayakawa, S Ikeda, Y Lee, R Sasaki, ...
2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007
3082007
2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
T Kawahara, R Takemura, K Miura, J Hayakawa, S Ikeda, YM Lee, ...
IEEE Journal of Solid-State Circuits 43 (1), 109-120, 2008
2762008
Semiconductor integrated circuit device having power reduction mechanism
M Horiguchi, K Uchiyama, K Itoh, T Sakata, M Aoki, T Kawahara
US Patent 5,583,457, 1996
247*1996
Low-power embedded SRAM modules with expanded margins for writing
M Yamaoka, N Maeda, Y Shinozaki, Y Shimazaki, K Nii, S Shimada, ...
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State …, 2005
2112005
Silicon on thin BOX: A new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control
R Tsuchiya, M Horiuchi, S Kimura, M Yamaoka, T Kawahara, S Maegawa, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
1922004
Semiconductor memory
M Yamaoka, K Osada, K Itoh, T Kawahara
US Patent 7,498,637, 2009
1752009
Semiconductor integrated circuit and data processing system
T Kawahara, H Sato, A Nozoe, K Yoshida, S Noda, S Kubono, H Kotani, ...
US Patent 6,496,418, 2002
1722002
Review and future prospects of low-voltage RAM circuits
Y Nakagome, M Horiguchi, T Kawahara, K Itoh
IBM Journal of Research and Development 47 (5.6), 525-552, 2003
1632003
A 32-Mb SPRAM with 2T1R memory cell, localized bi-directional write driver and1'/0'dual-array equalized reference scheme
R Takemura, T Kawahara, K Miura, H Yamamoto, J Hayakawa, ...
IEEE Journal of Solid-State Circuits 45 (4), 869-879, 2010
1622010
A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions
T Ishigaki, T Kawahara, R Takemura, K Ono, K Ito, H Matsuoka, H Ohno
2010 Symposium on VLSI Technology, 47-48, 2010
1352010
Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier
G Kitsukawa, K Yanagisawa, T Kawahara, R Hori, Y Nakagome, ...
US Patent 4,999,519, 1991
1341991
Dynamic RAM and information processing system using the same
M Nakamura, T Kawahara, K Kajigaya, K Oshima, T Takahashi, H Otori, ...
US Patent 5,426,603, 1995
1321995
Low power SRAM menu for SOC application using Yin-Yang-feedback memory cell technology
M Yamaoka, K Osada, R Tsuchiya, M Horiuchi, S Kimura, T Kawahara
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004
1302004
Electric-energy generation using variable-capacitive resonator for power-free LSI: efficiency analysis and fundamental experiment
M Miyazaki, H Tanaka, G Ono, T Nagano, N Ohkubo, T Kawahara, K Yano
Proceedings of the 2003 international symposium on Low power electronics and …, 2003
1292003
Scalable spin-transfer torque ram technology for normally-off computing
T Kawahara
IEEE Design & Test of Computers 28 (1), 52-63, 2010
1252010
90-nm process-variation adaptive embedded SRAM modules with power-line-floating write technique
M Yamaoka, N Maeda, Y Shinozaki, Y Shimazaki, K Nii, S Shimada, ...
IEEE Journal of Solid-State Circuits 41 (3), 705-711, 2006
1232006
Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB-based synthetic ferrimagnetic free layers
J Hayakawa, S Ikeda, K Miura, M Yamanouchi, YM Lee, R Sasaki, ...
IEEE Transactions on Magnetics 44 (7), 1962-1967, 2008
1192008
SRAM immunity to cosmic-ray-induced multierrors based on analysis of an induced parasitic bipolar effect
K Osada, K Yamaguchi, Y Saitoh, T Kawahara
IEEE Journal of Solid-State Circuits 39 (5), 827-833, 2004
1122004
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