| Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V−1 s−1 J Son, P Moetakef, B Jalan, O Bierwagen, NJ Wright, R Engel-Herbert, ... Nature materials 9 (6), 482-484, 2010 | 462 | 2010 |
| Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films H Yoon, M Choi, TW Lim, H Kwon, K Ihm, JK Kim, SY Choi, J Son Nature materials 15 (10), 1113-1119, 2016 | 286 | 2016 |
| Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films J Son, P Moetakef, JM LeBeau, D Ouellette, L Balents, SJ Allen, ... Applied Physics Letters 96 (6), 2010 | 259 | 2010 |
| Facet-Dependent in Situ Growth of Nanoparticles in Epitaxial Thin Films: The Role of Interfacial Energy KJ Kim, H Han, T Defferriere, D Yoon, S Na, SJ Kim, AM Dayaghi, J Son, ... Journal of the American Chemical Society 141 (18), 7509-7517, 2019 | 108 | 2019 |
| Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer Applied Physics Letters 102 (2), 2013 | 107 | 2013 |
| Structural origins of the properties of rare earth nickelate superlattices J Hwang, J Son, JY Zhang, A Janotti, CG Van de Walle, S Stemmer Physical Review B—Condensed Matter and Materials Physics 87 (6), 060101, 2013 | 104 | 2013 |
| Selective electrocatalysis imparted by metal–insulator transition for durability enhancement of automotive fuel cells SM Jung, SW Yun, JH Kim, SH You, J Park, S Lee, SH Chang, SC Chae, ... Nature Catalysis 3 (8), 639-648, 2020 | 88 | 2020 |
| A heterojunction modulation-doped Mott transistor J Son, S Rajan, S Stemmer, S James Allen Journal of Applied Physics 110 (8), 2011 | 86 | 2011 |
| Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures J Son, V Chobpattana, BM McSkimming, S Stemmer Applied Physics Letters 101 (10), 2012 | 82 | 2012 |
| Conductivity enhancement of ultrathin LaNiO3 films in superlattices J Son, JM LeBeau, SJ Allen, S Stemmer Applied Physics Letters 97 (20), 2010 | 78 | 2010 |
| Nanoscale quantification of octahedral tilts in perovskite films J Hwang, JY Zhang, J Son, S Stemmer Applied Physics Letters 100 (19), 2012 | 72 | 2012 |
| Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects S Yu, D Yoon, J Son Applied Physics Letters 108 (26), 2016 | 67 | 2016 |
| Optical conductivity of : Coherent transport and correlation driven mass enhancement DG Ouellette, SB Lee, J Son, S Stemmer, L Balents, AJ Millis, SJ Allen Physical Review B—Condensed Matter and Materials Physics 82 (16), 165112, 2010 | 65 | 2010 |
| Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing GY Song, C Oh, S Sinha, J Son, J Heo ACS applied materials & interfaces 9 (28), 23909-23917, 2017 | 58 | 2017 |
| Gate‐Induced Massive and Reversible Phase Transition of VO2 Channels Using Solid‐State Proton Electrolytes M Jo, HJ Lee, C Oh, H Yoon, JY Jo, J Son Advanced Functional Materials 28 (39), 1802003, 2018 | 55 | 2018 |
| Suppression of Near-Fermi Level Electronic States at the Interface <?format ?>in a Superlattice AM Kaiser, AX Gray, G Conti, J Son, A Greer, A Perona, A Rattanachata, ... Physical review letters 107 (11), 116402, 2011 | 53 | 2011 |
| Insulating state of ultrathin epitaxial LaNiO thin films detected by hard x-ray photoemission AX Gray, A Janotti, J Son, JM LeBeau, S Ueda, Y Yamashita, K Kobayashi, ... Physical Review B—Condensed Matter and Materials Physics 84 (7), 075104, 2011 | 53 | 2011 |
| Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films D Yoon, S Yu, J Son NPG Asia Materials 10 (4), 363-371, 2018 | 48 | 2018 |
| Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films A Khare, J Lee, J Park, GY Kim, SY Choi, T Katase, S Roh, TS Yoo, ... ACS applied materials & interfaces 10 (5), 4831-4837, 2018 | 48 | 2018 |
| Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films S Heo, C Oh, J Son, HM Jang Scientific reports 7 (1), 4681, 2017 | 48 | 2017 |
Si-Young ChoiPOSTECH在 postech.ac.kr 的电子邮件经过验证
