| Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan The Journal of Physical Chemistry C 118 (51), 30309-30314, 2014 | 117 | 2014 |
| Effective doping of monolayer phosphorene by surface adsorption of atoms for electronic and spintronic applications P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan IETE Journal of Research 63 (2), 205-215, 2017 | 56 | 2017 |
| Intrinsic magnetism in monolayer transition metal trihalides: A comparative study S Tomar, B Ghosh, S Mardanya, P Rastogi, BS Bhadoria, YS Chauhan, ... Journal of Magnetism and Magnetic Materials 489, 165384, 2019 | 53 | 2019 |
| Impact of channel thickness variation on bandstructure and source-to-drain tunneling in ultra-thin body III-V MOSFETs T Dutta, S Kumar, P Rastogi, A Agarwal, YS Chauhan IEEE Journal of the Electron Devices Society 4 (2), 66-71, 2016 | 39 | 2016 |
| Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETs P RASTOGI, T Dutta, S Gupta, A Agarwal, Y Chauhan IEEE Transactions on Electron Devices, 2015 | 35 | 2015 |
| Charge-based modeling of transition metal dichalcogenide transistors including ambipolar, trapping, and negative capacitance effects C Yadav, P Rastogi, T Zimmer, YS Chauhan IEEE Transactions on Electron Devices 65 (10), 4202-4208, 2018 | 22 | 2018 |
| Compact modeling of cross-sectional scaling in gate-all-around FETs: 3-D to 1-D transition A Dasgupta, P Rastogi, A Agarwal, C Hu, YS Chauhan IEEE Transactions on Electron Devices 65 (3), 1094-1100, 2018 | 20 | 2018 |
| Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: thickness scaling P Jain, P Rastogi, C Yadav, A Agarwal, YS Chauhan Journal of Applied Physics 122 (1), 2017 | 13 | 2017 |
| Adsorption of magnetic transition metals on borophene: an ab initio study S Tomar, P Rastogi, BS Bhadoria, S Bhowmick, YS Chauhan, A Agarwal The European Physical Journal B 91 (3), 2018 | 11 | 2018 |
| Explicit model of channel charge, backscattering, and mobility for graphene FET in quasi-ballistic regime AK Upadhyay, AK Kushwaha, P Rastogi, YS Chauhan, SK Vishvakarma IEEE Transactions on Electron Devices 65 (12), 5468-5474, 2018 | 10 | 2018 |
| Atomistic study of band structure and transport in extremely thin channel InP MOSFETs T Dutta, P Kumar, P Rastogi, A Agarwal, YS Chauhan physica status solidi (a) 213 (4), 898-904, 2016 | 10 | 2016 |
| Significant enhancement of the stark effect in rippled monolayer blue phosphorus S Agnihotri, P Rastogi, YS Chauhan, A Agarwal, S Bhowmick The Journal of Physical Chemistry C 122 (9), 5171-5177, 2018 | 9 | 2018 |
| Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ... IEEE Journal of the Electron Devices Society 8, 1177-1183, 2020 | 8 | 2020 |
| Modeling of multi-domain switching in ferroelectric materials: Application to negative capacitance FETs A Dasgupta, P Rastogi, D Saha, A Gaidhane, A Agarwal, YS Chauhan 2018 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2018 | 8 | 2018 |
| Ab-initio study of doping versus adsorption in monolayer M0S2 P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-5, 2014 | 8 | 2014 |
| Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ... 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 4 | 2020 |
| A review report for next generation of CMOS technology as spintronics: fundamentals, applications and future SB Rahi, P Rastogi International Journal of Advances in Engineering & Technology 6 (2), 696, 2013 | 4 | 2013 |
| Analysis and modeling of quantum capacitance in III-V transistors A Dasgupta, C Yadav, P Rastogi, A Agarwal, YS Chauhan 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 3 | 2014 |
| Atomistic Study of Acoustic Phonon Limited Mobility in Extremely Scaled Si and Ge Films P Rastogi, S Bhowmick, A Agarwal, S Chauhan 2018 IEEE International Conference on Electronics, Computing and …, 2018 | 2 | 2018 |
| Thermoelectric Properties of CrI3 Monolayer S Tomar, P Rastogi, BS Bhadoria, S Bhowmick, A Agarwal, YS Chauhan 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018 | 1 | 2018 |
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT Kanpur在 iitk.ac.in 的电子邮件经过验证
