| Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits M Saremi, A Afzali-Kusha, S Mohammadi Microelectronic Engineering 95, 74-82, 2012 | 130 | 2012 |
| A Novel PNPN-Like Z-Shaped Tunnel Field-Effect Transistor With Improved Ambipolar Behavior and RF Performance RM Imenabadi, M Saremi, WG Vandenberghe IEEE Transactions on Electron Devices 64 (11), 4752 - 4758, 2017 | 121 | 2017 |
| Modeling of Lightly Doped Drain and Source Graphene Nanoribbon Field Effect Transistors M Saremi, M Saremi, H Niazi, AY Goharrizi Superlattices and Microstructures 60, 67-72, 2013 | 92 | 2013 |
| Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping AY Goharrizi, M Zoghi, M Saremi IEEE Transactions on Electron Devices 63 (9), 3761-3768, 2016 | 90 | 2016 |
| Band Gap Tuning of Armchair Graphene Nanoribbons by Using Antidotes M Zoghi, A Yazdanpanah Goharrizi, M Saremi Journal of Electronic Materials 46 (1), 340-346, 2017 | 72 | 2017 |
| A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications R Molaei Imen Abadi, M Saremi Journal of Electronic Materials 47 (2), 1091-1098, 2018 | 62 | 2018 |
| Analysis of the reverse I-V characteristics of diamond-based PIN diodes M Saremi, R Hathwar, M Dutta, F Koeck, R Nemanich, S Chowdhury, ... Applied Physics Letters 111 (4), 043507, 2017 | 55 | 2017 |
| A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi Microelectronics Reliability 51 (12), 2069-2076, 2011 | 49 | 2011 |
| SOI LDMOSFET with Up and Down Extended Stepped Drift Region M Saremi, M Saremi, H Niazi, M Saremi, A Yazdanpanah Goharrizi Journal of Electronic Materials 46 (10), 5570-5576, 2017 | 40 | 2017 |
| A physical-based simulation for the dynamic behavior of photodoping mechanism in the chalcogenide materials used in the lateral programmable metallization cells M Saremi Solid State Ionics 290, 1-5, 2016 | 38 | 2016 |
| Process variation study of ground plane SOI MOSFET M Saremi, B Ebrahimi, AA Kusha, M Saremi Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on, 66-69, 2010 | 37 | 2010 |
| A 4.5- μ m PIN diamond diode for detecting slow neutrons J Holmes, M Dutta, F Koeck, J Brown, B Fox, R Hathwar, H Johnson, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018 | 36 | 2018 |
| Physically Based Predictive Model for Single Event Transients in CMOS Gates M Saremi, A Privat, H Barnaby, L Clark IEEE Transaction on Electron Devices 63 (6), 2248 - 2254, 2016 | 31 | 2016 |
| Ground plane SOI MOSFET based SRAM with consideration of process variation M Saremi, B Ebrahimi, A Afzali-Kusha 2010 IEEE international conference of electron devices and solid-state …, 2010 | 31 | 2010 |
| Static impedance behavior of programmable metallization cells S Rajabi, M Saremi, HJ Barnaby, A Edwards, MN Kozicki, M Mitkova, ... Solid-State Electronics 106, 27-33, 2015 | 30 | 2015 |
| Modeling and Simulation of the Programmable Metallization Cells (PMCs) and Diamond-Based Power Devices M Saremi Arizona State University, 2017 | 28 | 2017 |
| The Effects of Process Variation on the Parametric Model of the Static Impedance Behavior of Programmable Metallization Cell (PMC) M Saremi, S Rajabi, HJ Barnaby, MN Kozicki MRS Proceedings 1692, mrss14-1692-cc09-39, 2014 | 25 | 2014 |
| Analytical Relationship between Anion Formation and Carrier-Trap Statistics in Chalcogenide Glass Films M Saremi, H Barnaby, A Edwards, M Kozicki ECS Electrochemistry Letters 4 (7), H29-H31, 2015 | 22 | 2015 |
| G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh IEICE Electronics Express 9 (10), 881-887, 2012 | 21 | 2012 |
| Carrier Mobility Extraction Method in ChGs in the UV Light Exposure M Saremi Micro and Nano Letters 11 (11), 762 – 764, 2016 | 16 | 2016 |
Ali Afzali-KushaUniversity of Tehran在 ut.ac.ir 的电子邮件经过验证
