| Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects J Li, A Castellazzi, T Dai, M Corfield, AK Solomon, CM Johnson IEEE Transactions on Power Electronics 30 (5), 2587-2600, 2014 | 40 | 2014 |
| The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ... Journal of Applied Physics 127 (2), 2020 | 16 | 2020 |
| 4H‐SiC trench MOSFET with integrated fast recovery MPS diode T Dai, CW Chan, X Deng, H Jiang, PM Gammon, MR Jennings, ... Electronics Letters 54 (3), 167-169, 2018 | 16 | 2018 |
| The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal AB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, M Antoniou, GWC Baker, ... Materials Science in Semiconductor Processing 122, 105527, 2021 | 13 | 2021 |
| High temperature nitridation of 4H-SiC MOSFETs H Rong, YK Sharma, TX Dai, F Li, MR Jennings, S Russell, DM Martin, ... Materials Science Forum 858, 623-626, 2016 | 13 | 2016 |
| Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization GWC Baker, C Chan, AB Renz, Y Qi, T Dai, F Li, VA Shah, PA Mawby, ... IEEE Transactions on Electron Devices 68 (7), 3497-3504, 2021 | 7 | 2021 |
| Development of high-quality gate oxide on 4H-SiC using atomic layer deposition AB Renz, OJ Vavasour, PM Gammon, F Li, TX Dai, S Esfahani, ... Materials Science Forum 1004, 547-553, 2020 | 7 | 2020 |
| A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs X Deng, Y Guo, T Dai, C Li, X Chen, W Chen, Y Zhang, B Zhang Materials Science in Semiconductor Processing 68, 108-113, 2017 | 7 | 2017 |
| Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications AB Renz, F Li, OJ Vavasour, PM Gammon, T Dai, GWC Baker, F La Via, ... Semiconductor Science and Technology 36 (5), 055006, 2021 | 5 | 2021 |
| 4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask TX Dai, Z Mohammadi, S Russell, CA Fisher, MR Jennings, PA Mawby Materials Science Forum 897, 371-374, 2017 | 5 | 2017 |
| Real-time degradation monitoring and lifetime estimation of 3D integrated bond-wire-less double-sided cooled power switch technologies T Dai, JF Li, M Corfield, A Castellazzi, P Wheeler 2013 15th European Conference on Power Electronics and Applications (EPE), 1-8, 2013 | 5 | 2013 |
| Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization GWC Baker, PM Gammon, AB Renz, O Vavasour, CW Chan, Y Qi, T Dai, ... IEEE Transactions on Electron Devices 69 (4), 1924-1930, 2022 | 4 | 2022 |
| A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices T Dai, L Zhang, O Vavasour, AB Renz, VA Shah, M Antoniou, PA Mawby, ... IEEE Transactions on Electron Devices 68 (3), 1162-1167, 2021 | 4 | 2021 |
| Integrated matrix converter switch A Castellazzi, T Dai, J Li, A Solomon, A Trentin, P Wheeler 2013 IEEE 10th International Conference on Power Electronics and Drive …, 2013 | 4 | 2013 |
| Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation S Russell, MR Jennings, TX Dai, F Li, DP Hamilton, CA Fisher, ... Materials Science Forum 897, 155-158, 2017 | 3 | 2017 |
| A 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance L Zhang, T Dai, P Gammon, V Shah, P Mawby, M Antoniou 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2022 | 2 | 2022 |
| A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices T Dai, L Zhang, O Vavasour, AB Renz, Q Cao, VA Shah, PA Mawby, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 2 | 2021 |
| Design optimization of 1.2 kV 4H-SiC trench MOSFET TX Dai, PM Gammon, VA Shah, X Deng, MR Jennings, PA Mawby Materials Science Forum 963, 605-608, 2019 | 2 | 2019 |
| Safe-operating-area of snubberless series connected silicon and SiC power devices Z Davletzhanova, T Dai, O Alatise, JO Gonzalez, P Mawby, R Bonyadi, ... 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 1875-1881, 2018 | 2 | 2018 |
| Comparison of a 3.3 kV SiC Hybrid-Channel Trench MOSFET and a Planar MOSFET L Zhang, T Dai, P Gammon, V Shah, P Mawby, M Antoniou 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 1 | 2022 |
