| Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ... IEEE Electron Device Letters 30 (11), 1128-1130, 2009 | 116 | 2009 |
| Memory hole size variation in a 3D stacked memory L Pang, A Baraskar, Y Zhang, Y Dong US Patent 9,812,462, 2017 | 87 | 2017 |
| Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 74 | 2009 |
| Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data A Baraskar, AC Gossard, MJW Rodwell Journal of Applied Physics 114 (15), 2013 | 65 | 2013 |
| InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology U Singisetti, MA Wistey, GJ Burek, E Arkun, AK Baraskar, Y Sun, ... physica status solidi c 6 (6), 1394-1398, 2009 | 55 | 2009 |
| Ultra low contact resistivities for CMOS beyond 10-nm node Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ... IEEE electron device letters 34 (6), 723-725, 2013 | 52 | 2013 |
| Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition CN Chinnasamy, SD Yoon, A Yang, A Baraskar, C Vittoria, VG Harris Journal of applied physics 101 (9), 2007 | 51 | 2007 |
| Full band calculations of the intrinsic lower limit of contact resistivity J Maassen, C Jeong, A Baraskar, M Rodwell, M Lundstrom Applied Physics Letters 102 (11), 2013 | 50 | 2013 |
| Ex situ Ohmic contacts to n-InGaAs A Baraskar, MA Wistey, V Jain, E Lobisser, U Singisetti, G Burek, YJ Lee, ... Journal of Vacuum Science & Technology B 28 (4), C5I7-C5I9, 2010 | 41 | 2010 |
| First demonstration of high-Ge-content strained-Si1−xGex(x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and … P Hashemi, K Balakrishnan, SU Engelmann, JA Ott, A Khakifirooz, ... 2014 IEEE International Electron Devices Meeting, 16.1. 1-16.1. 4, 2014 | 36 | 2014 |
| 1.0 THz fmaxInP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance V Jain, JC Rode, HW Chiang, A Baraskar, E Lobisser, BJ Thibeault, ... 69th Device Research Conference, 271-272, 2011 | 35 | 2011 |
| High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions P Hashemi, M Kobayashi, A Majumdar, LA Yang, A Baraskar, ... 2013 Symposium on VLSI Circuits, T18-T19, 2013 | 34 | 2013 |
| Functionalization of FeCo alloy nanoparticles with highly dielectric amorphous oxide coatings Q Nguyen, CN Chinnasamy, SD Yoon, S Sivasubramanian, T Sakai, ... Journal of Applied Physics 103 (7), 2008 | 34 | 2008 |
| InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous V Jain, E Lobisser, A Baraskar, BJ Thibeault, MJW Rodwell, Z Griffith, ... IEEE Electron Device Letters 32 (1), 24-26, 2010 | 29 | 2010 |
| Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for … P Hashemi, K Balakrishnan, A Majumdar, A Khakifirooz, W Kim, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 28 | 2014 |
| Multi-pass programming process for memory device which omits verify test in first program pass A Baraskar, CH Lu, V Diep, Y Dong US Patent 10,811,109, 2020 | 22 | 2020 |
| High doping effects on in-situ Ohmic contacts to n-InAs A Baraskar, V Jain, MA Wistey, U Singisetti, YJ Lee, B Thibeault, ... 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 22 | 2010 |
| Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof A Baraskar, N Hosoda, Y Zhang, RS Makala, H Tanaka, R Nakamura, ... US Patent 10,115,730, 2018 | 21 | 2018 |
| Dual Silicide Process AK Baraskar, C Cabral, SO Koswatta, C Lavoie, AS Ozcan, L Yang, ... US Patent App. 13/755,427, 2014 | 18 | 2014 |
| III-V MOSFETs: Scaling laws, scaling limits, fabrication processes MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ... 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 17 | 2010 |
