High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ... Applied physics letters 75 (16), 2365-2367, 1999 | 656 | 1999 |
A 71-Gb/s NRZ modulated 850-nm VCSEL-based optical link DM Kuchta, AV Rylyakov, FE Doany, CL Schow, JE Proesel, CW Baks, ... IEEE Photonics Technology Letters 27 (6), 577-580, 2015 | 457 | 2015 |
VCSEL-based interconnects for current and future data centers JA Tatum, D Gazula, LA Graham, JK Guenter, RH Johnson, J King, ... Journal of Lightwave Technology 33 (4), 727-732, 2015 | 277 | 2015 |
Backgating in GaAs MESFET's C Kocot, CA Stolte IEEE Transactions on Electron Devices 29 (7), 1059-1064, 1982 | 164 | 1982 |
Bulk GaN based violet light-emitting diodes with high efficiency at very high current density MJ Cich, RI Aldaz, A Chakraborty, A David, MJ Grundmann, A Tyagi, ... Applied Physics Letters 101 (22), 2012 | 145 | 2012 |
GaN-based light emitting diodes with tunnel junctions T Takeuchi, G Hasnain, S Corzine, M Hueschen, RP Schneider Jr, ... Japanese Journal of Applied Physics 40 (8B), L861, 2001 | 141 | 2001 |
Techno-economic comparison of silicon photonics and multimode VCSELs D Mahgerefteh, C Thompson, C Cole, G Denoyer, T Nguyen, ... Journal of Lightwave Technology 34 (2), 233-242, 2016 | 130 | 2016 |
Heterojunction‐induced phenomena in Hall effect and photoconductivity measurements of epitaxial AlxGa1−xAs DM Collins, DE Mars, B Fischer, C Kocot Journal of applied physics 54 (2), 857-861, 1983 | 77 | 1983 |
1.4× efficiency improvement in transparent-substrate (AlxGa1− x) 0.5 In0. 5P light-emitting diodes with thin (⩽ 2000 Å) active regions NF Gardner, HC Chui, EI Chen, MR Krames, JW Huang, FA Kish, ... Applied physics letters 74 (15), 2230-2232, 1999 | 76 | 1999 |
III-Nitride light emitting devices with low driving voltage W Goetz, NF Gardner, RS Kern, AY Kim, A Munkholm, SA Stockman, ... US Patent 6,630,692, 2003 | 68 | 2003 |
Single-channel 50G and 100G discrete multitone transmission with 25G VCSEL technology WA Ling, I Lyubomirsky, R Rodes, HM Daghighian, C Kocot Journal of Lightwave Technology 33 (4), 761-767, 2015 | 65 | 2015 |
Light emitting semiconductor devices including wafer bonded heterostructures MR Krames, CP Kocot US Patent 6,525,335, 2003 | 63 | 2003 |
A 55Gb/s directly modulated 850nm VCSEL-based optical link DM Kuchta, AV Rylyakov, CL Schow, JE Proesel, C Baks, C Kocot, ... IEEE Photonics Conference 2012, 1-2, 2012 | 61 | 2012 |
High-brightness AlGaInN light-emitting diodes MR Krames, G Christenson, D Collins, LW Cook, MG Craford, A Edwards, ... Light-Emitting Diodes: Research, Manufacturing, and Applications IV 3938, 2-12, 2000 | 60 | 2000 |
Chirped multi-well active region LED PN Grillot, CP Kocot, MR Krames, EI Chen, SA Stockman, YL Chang, ... US Patent 6,504,171, 2003 | 55 | 2003 |
Data communication using multiple channels I Lyubomirsky, C Kocot, JP King, S Hallstein, B Hamel-Bissell US Patent 9,628,216, 2017 | 50 | 2017 |
The role of As in molecular‐beam epitaxy GaAs layers grown at low temperature Z Liliental‐Weber, G Cooper, R Mariella Jr, C Kocot Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 50 | 1991 |
Anomalies in MODFET's with a low-temperature buffer BJF Lin, CP Kocot, DE Mars, R Jaeger IEEE transactions on electron devices 37 (1), 46-50, 1990 | 45 | 1990 |
Visible laser sources for projection displays M Jansen, GP Carey, R Carico, R Dato, AM Earman, MJ Finander, ... Projection Displays XII 6489, 50-55, 2007 | 44 | 2007 |
Light emitting diodes with graded composition active regions DP Bour, NF Gardner, WK Goetz, SA Stockman, T Takeuchi, G Hasnain, ... US Patent 6,955,933, 2005 | 43 | 2005 |