Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ... Nano letters 18 (5), 3125-3131, 2018 | 710 | 2018 |
p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 2014 | 345 | 2014 |
Influence of thermal annealing ambient on Ga-doped ZnO thin films B Du Ahn, SH Oh, CH Lee, GH Kim, HJ Kim, SY Lee Journal of Crystal Growth 309 (2), 128-133, 2007 | 175 | 2007 |
Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature JH Kim, BD Ahn, CH Lee, KA Jeon, HS Kang, SY Lee Journal of applied physics 100 (11), 2006 | 96 | 2006 |
Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters JH Kim, B Du Ahn, CH Kim, KA Jeon, HS Kang, SY Lee Thin Solid Films 516 (7), 1330-1333, 2008 | 83 | 2008 |
Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films B Du Ahn, JH Kim, HS Kang, CH Lee, SH Oh, KW Kim, G Jang, SY Lee Thin Solid Films 516 (7), 1382-1385, 2008 | 81 | 2008 |
Layer-transferred MoS2/GaN PN diodes EW Lee, CH Lee, PK Paul, L Ma, WD McCulloch, S Krishnamoorthy, Y Wu, ... Applied Physics Letters 107 (10), 2015 | 80 | 2015 |
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ... Journal of Applied Physics 121 (9), 2017 | 78 | 2017 |
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V− 1 s− 1 L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu Applied Physics Letters 105 (7), 2014 | 77 | 2014 |
Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes JH Kim, B Du Ahn, CH Lee, KA Jeon, HS Kang, SY Lee Thin Solid Films 516 (7), 1529-1532, 2008 | 76 | 2008 |
High current density 2D/3D MoS2/GaN Esaki tunnel diodes S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ... Applied Physics Letters 109 (18), 2016 | 74 | 2016 |
Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions EW Lee, L Ma, DN Nath, CH Lee, A Arehart, Y Wu, S Rajan Applied Physics Letters 105 (20), 2014 | 54 | 2014 |
Use of laser lift-off for flexible device applications CH Lee, SJ Kim, Y Oh, MY Kim, YJ Yoon, HS Lee Journal of Applied Physics 108 (10), 2010 | 40 | 2010 |
Enhancement in electrical and optical properties of indium tin oxide thin films grown using a pulsed laser deposition at room temperature by two-step process JH Kim, B Du Ahn, CH Lee, KA Jeon, HS Kang, GH Kim, SY Lee Thin Solid Films 515 (7-8), 3580-3583, 2007 | 38 | 2007 |
Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz H Xue, CH Lee, K Hussian, T Razzak, M Abdullah, Z Xia, SH Sohel, ... Applied Physics Express 12 (6), 066502, 2019 | 37 | 2019 |
Transferred large area single crystal MoS2 field effect transistors CH Lee, W McCulloch, EW Lee, L Ma, S Krishnamoorthy, J Hwang, Y Wu, ... Applied Physics Letters 107 (19), 2015 | 30 | 2015 |
BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ... Applied Physics Letters 116 (2), 2020 | 28 | 2020 |
A self-limiting layer-by-layer etching technique for 2H-MoS2 CH Lee, EW Lee, W McCulloch, Z Jamal-Eddine, S Krishnamoorthy, ... Applied Physics Express 10 (3), 035201, 2017 | 20 | 2017 |
Epitaxial Dirac semimetal vertical heterostructures for advanced device architectures AD Rice, CH Lee, B Fluegel, AG Norman, JN Nelson, CS Jiang, M Steger, ... Advanced Functional Materials 32 (21), 2111470, 2022 | 13 | 2022 |
Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy CH Lee, S Krishnamoorthy, PK Paul, DJ O'Hara, MR Brenner, ... Applied Physics Letters 111 (20), 2017 | 13 | 2017 |