| Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017 | 280 | 2017 |
| Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim Materials 9 (12), 1007, 2016 | 132 | 2016 |
| Extremely high barrier performance of organic–inorganic nanolaminated thin films for organic light-emitting diodes KH Yoon, HS Kim, KS Han, SH Kim, YEK Lee, NK Shrestha, SY Song, ... Acs Applied Materials & Interfaces 9 (6), 5399-5408, 2017 | 79 | 2017 |
| Low-voltage operation and high endurance of 5-nm ferroelectric Hf0. 5Zr0. 5O2 capacitors SJ Kim, J Mohan, HS Kim, J Lee, CD Young, L Colombo, SR Summerfelt, ... Applied Physics Letters 113 (18), 2018 | 65 | 2018 |
| Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells S Yoon, SJ Kim, HS Kim, JS Park, IK Han, JW Jung, M Park Nanoscale 9 (42), 16305-16312, 2017 | 44 | 2017 |
| A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ... Materials 13 (13), 2968, 2020 | 39 | 2020 |
| Low‐thermal‐budget fluorite‐structure ferroelectrics for future electronic device applications HJ Kim, Y An, YC Jung, J Mohan, JG Yoo, YI Kim, H Hernandez-Arriaga, ... physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100028, 2021 | 33 | 2021 |
| Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic … SJ Kim, J Mohan, JS Lee, HS Kim, J Lee, CD Young, L Colombo, ... ACS applied materials & interfaces 11 (5), 5208-5214, 2019 | 32 | 2019 |
| Investigation of the physical properties of plasma enhanced atomic layer deposited silicon nitride as etch stopper HS Kim, X Meng, SJ Kim, AT Lucero, L Cheng, YC Byun, JS Lee, ... ACS applied materials & interfaces 10 (51), 44825-44833, 2018 | 31 | 2018 |
| Hollow cathode plasma-enhanced atomic layer deposition of silicon nitride using pentachlorodisilane X Meng, HS Kim, AT Lucero, SM Hwang, JS Lee, YC Byun, J Kim, ... ACS applied materials & interfaces 10 (16), 14116-14123, 2018 | 31 | 2018 |
| Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ... Applied Physics Letters 115 (18), 2019 | 30 | 2019 |
| Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1− xO2/ZrO2 bilayer by atomic layer deposition T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... Applied Physics Letters 117 (23), 2020 | 26 | 2020 |
| Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO KS Park, S Kim, H Kim, D Kwon, YEK Lee, SW Min, S Im, HJ Choi, S Lim, ... Nanoscale 7 (42), 17702-17709, 2015 | 25 | 2015 |
| Low-thermal-budget (300° C) ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors realized using high-pressure annealing SJ Kim, YC Jung, J Mohan, HJ Kim, SM Rho, MS Kim, JG Yoo, HR Park, ... Applied Physics Letters 119 (24), 2021 | 20 | 2021 |
| Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ... Materials 13 (15), 3387, 2020 | 17 | 2020 |
| Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1− xO2 thin films using synchrotron x-ray analysis T Onaya, T Nabatame, YC Jung, H Hernandez-Arriaga, J Mohan, HS Kim, ... APL Materials 9 (3), 2021 | 14 | 2021 |
| Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks J Zheng, B Lienhard, G Doerk, M Cotlet, E Bersin, HS Kim, YC Byun, ... Scientific reports 9 (1), 6914, 2019 | 14 | 2019 |
| Improvement of ferroelectricity and fatigue property of thicker HfxZr1− xO2/ZrO2 bi-layer T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... ECS Transactions 98 (3), 63, 2020 | 13 | 2020 |
| Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings SM Hwang, HS Kim, DN Le, AV Ravichandran, A Sahota, J Lee, YC Jung, ... ACS Applied Nano Materials 4 (3), 2558-2564, 2021 | 11 | 2021 |
| Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for … HS Kim, A Sahota, J Mohan, AT Lucero, Y Chan Jung, M Kim, JS Lee, ... ACS Applied Electronic Materials 3 (5), 2309-2316, 2021 | 9 | 2021 |
Jiyoung KimProfessor of Materials Science and Engineering, University of Texas at Dallas在 utdallas.edu 的电子邮件经过验证
