| Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition X Liu, J Kim, R Yeluri, S Lal, H Li, J Lu, S Keller, B Mazumder, JS Speck, ... Journal of Applied Physics 114 (16), 164507, 2013 | 42 | 2013 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ... Applied Physics Letters 103 (5), 053509, 2013 | 35 | 2013 |
| Wafer-Bonded pn Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN J Kim, NG Toledo, S Lal, J Lu, TE Buehl, UK Mishra IEEE Electron Device Letters 34 (1), 42-44, 2012 | 22 | 2012 |
| Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition UKM X Liu, CM Jackson, F Wu, B Mazumder, R Yeluri, J Kim, S Keller, AR ... Journal of Applied Physics 119 (1), 015303, 2016 | 17 | 2016 |
| Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN R Yeluri, X Liu, M Guidry, OS Koksaldi, S Lal, J Kim, J Lu, S Keller, ... Applied Physics Letters 105 (22), 222905, 2014 | 17 | 2014 |
| In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ... Applied Physics Letters 104 (26), 263511, 2014 | 17 | 2014 |
| Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain J Kim, MA Laurent, H Li, S Lal, UK Mishra Applied Physics Letters 106 (2), 023506, 2015 | 9 | 2015 |
| Rapid In-line Process Window Characterization Using Voltage Contrast Test Structures for Advanced FinFET Technology Development W Gao, J Kim, HC Peng, CC Huang, OD Patterson, YC Su, HT Yeh, ... 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2019 | 6 | 2019 |
| Vertical electron transistors with In0.53Ga0.47As channel and N-polar In0.1Ga0.9N/GaN drain achieved by direct wafer-bonding J Kim, S Lal, MA Laurent, UK Mishra 72nd Device Research Conference, 221-222, 2014 | 2 | 2014 |
| Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge SHC Xiang Liu, Umesh K Mishra, Stacia Keller, Jeonghee Kim, Matthew Laurent ... US Patent US20160163846 A1, 2016 | | 2016 |
| Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage UKM Srabanti Chowdhury, Jeonghee Kim, Chirag Gupta, Stacia Keller WO Patent WO2015175915 A1, 2015 | | 2015 |
Shalini LalUniversity of Wisconsin Madison在 ece.ucsb.edu 的电子邮件经过验证
