关注
kiryun kwon
kiryun kwon
其他姓名seok jin kwon
在 hanyang.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network
W Shin, J Im, RH Koo, J Kim, KR Kwon, D Kwon, JJ Kim, JH Lee, D Kwon
Advanced Science 10 (15), 2207661, 2023
192023
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2
C Han, KR Kwon, J Kim, J Yim, S Kim, EC Park, JW You, S Jeong, R Choi, ...
Materials Science in Semiconductor Processing 160, 107401, 2023
72023
Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2
C Han, SJ Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ...
IEEE Transactions on Electron Devices 69 (6), 3499-3502, 2022
62022
All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel
S Jeong, C Han, J Yim, J Kim, KR Kwon, S Kim, EC Park, JW You, R Choi, ...
IEEE Electron Device Letters 44 (5), 749-752, 2023
52023
Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack
KK Min, SJ Kwon, Y Kim, J Yu, JH Lee, BG Park, D Kwon
Applied Physics Letters 120 (1), 2022
52022
Ferroelectric field-effect transistor synaptic device with hafnium-silicate interlayer
SW Kim, W Shin, M Kim, KR Kwon, J Yim, J Kim, C Han, S Jeong, EC Park, ...
IEEE Electron Device Letters, 2023
32023
Ferroelectric polarization-switching acceleration of sputtered Hf0. 5Zr0. 5O2 with defect-induced polarization of interlayer
C Han, J Yim, A Nguyen, J Kim, KR Kwon, S Kim, S Jeong, EC Park, ...
Journal of Alloys and Compounds 960, 170516, 2023
22023
Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered HfZrO
C Han, KR Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ...
IEEE Transactions on Electron Devices, 2024
12024
Analysis on Degradation of Ferroelectric Memory
S Kim, J Kim, S Jeong, K Kwon, C Han, E Park, J Yim, B Kwak, J You, ...
한국차세대컴퓨팅학회 학술대회, 212-213, 2022
2022
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