| All-optical photonic crystal memory cells based on cavities with a dual-argument hysteresis feature A Geravand, M Danaie, S Mohammadi Optics Communications 430, 323-335, 2019 | 52 | 2019 |
| Photonic crystal double-coupled cavity waveguides and their application in design of slow-light delay lines M Danaie, A Geravand, S Mohammadi Photonics and Nanostructures-Fundamentals and Applications 28, 61-69, 2018 | 52 | 2018 |
| Potential and drain current modeling of gate-all-around tunnel FETs considering the junctions depletion regions and the channel mobile charge carriers HRT Khaveh, S Mohammadi IEEE Transactions on Electron Devices 63 (12), 5021-5029, 2016 | 34 | 2016 |
| An analytical model for double-gate tunnel FETs considering the junctions depletion regions and the channel mobile charge carriers S Mohammadi, HRT Khaveh IEEE Transactions on Electron Devices 64 (3), 1276-1284, 2017 | 29 | 2017 |
| An analytical drain current model for the cylindrical channel gate-all-around heterojunction tunnel FETs D Keighobadi, S Mohammadi, M Fathipour IEEE Transactions on Electron Devices 66 (8), 3646-3651, 2019 | 28 | 2019 |
| Vertical cladding layer-based doping-less tunneling field effect transistor: a novel low-power high-performance device IC Cherik, S Mohammadi IEEE Transactions on Electron Devices 69 (3), 1474-1479, 2022 | 25 | 2022 |
| Germanium-source L-shaped TFET with dual in-line tunneling junction I Chahardah Cherik, S Mohammadi Applied Physics A 127 (7), 525, 2021 | 22 | 2021 |
| Enhanced on-state current and suppressed ambipolarity in germanium-source dual vertical-channel TFET IC Cherik, S Mohammadi Semiconductor Science and Technology 36 (4), 045020, 2021 | 21 | 2021 |
| Switching performance enhancement in nanotube double-gate tunneling field-effect transistor with germanium source regions IC Cherik, S Mohammadi, AA Orouji IEEE Transactions on Electron Devices 69 (1), 364-369, 2021 | 18 | 2021 |
| Vertical tunneling field-effect transistor with germanium source and T-shaped silicon channel for switching and biosensing applications: A simulation study IC Cherik, S Mohammadi IEEE Transactions on Electron Devices 69 (9), 5170-5176, 2022 | 17 | 2022 |
| A simulation study to improve the efficiency of ZnO1-xSx/Cu2ZnSn (Sy, Se1-y) 4 solar cells by composition-ratio control S Sharbati, E Norouzzadeh, S Mohammadi Optical Materials 78, 259-265, 2018 | 17 | 2018 |
| Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs S Mohammadi, A Afzali-Kusha Microelectronics Reliability 51 (3), 543-549, 2011 | 15 | 2011 |
| Simulation analysis of a novel fully depleted SOI MOSFET: Electrical and thermal performance improvement through trapezoidally doped channel and silicon–nitride buried insulator H Shahnazarisani, S Mohammadi Physica E: Low-dimensional Systems and Nanostructures 69, 27-33, 2015 | 13 | 2015 |
| Dielectric modulated doping-less tunnel field-effect transistor, a novel biosensor based on cladding layer concept IC Cherik, S Mohammadi IEEE Sensors Journal 22 (11), 10308-10314, 2022 | 12 | 2022 |
| First principles characterization of defect-free and vacancy-defected monolayer PtSe2 gas sensors E Norouzzadeh, S Mohammadi, M Moradinasab Sensors and Actuators A: Physical 313, 112209, 2020 | 12 | 2020 |
| Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects S Mohammadi, A Afzali-Kusha Microelectronics Reliability 50 (3), 338-345, 2010 | 11 | 2010 |
| A universal analytical potential model for double-gate Heterostructure tunnel FETs S Mohammadi, D Keighobadi IEEE Transactions on Electron Devices 66 (3), 1605-1612, 2019 | 10 | 2019 |
| Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study D Madadi, S Mohammadi Discover Nano 18 (1), 37, 2023 | 9 | 2023 |
| Design insights into switching performance of germanium source L-shaped gate dopingless TFET based on cladding layer concept IC Cherik, S Mohammadi IEEE Transactions on Electron Devices 70 (2), 801-805, 2022 | 9 | 2022 |
| Recessed gate cylindrical heterostructure TFET, a device with extremely steep subthreshold swing D Keighobadi, S Mohammadi, M Mohtaram Transactions on Electrical and Electronic Materials, 1-7, 2021 | 9 | 2021 |
