| Robust zero-field skyrmion formation in FeGe epitaxial thin films JC Gallagher, KY Meng, JT Brangham, HL Wang, BD Esser, DW McComb, ... Physical review letters 118 (2), 027201, 2017 | 130 | 2017 |
| Solar-cycle characteristics examined in separate hemispheres: phase, Gnevyshev gap, and length of minimum AA Norton, JC Gallagher Solar Physics 261, 193-207, 2010 | 105 | 2010 |
| GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ... IEEE Electron Device Letters 40 (6), 881-884, 2019 | 76 | 2019 |
| Exceptionally high magnetization of stoichiometric Y3Fe5O12 epitaxial films grown on Gd3Ga5O12 JC Gallagher, AS Yang, JT Brangham, BD Esser, SP White, MR Page, ... Applied Physics Letters 109 (7), 2016 | 54 | 2016 |
| The effect of chemical pressure on the structure and properties of A2CrOsO6 (A= Sr, Ca) ferrimagnetic double perovskite R Morrow, JR Soliz, AJ Hauser, JC Gallagher, MA Susner, MD Sumption, ... Journal of Solid State Chemistry 238, 46-52, 2016 | 50 | 2016 |
| Thickness dependence of spin Hall angle of Au grown on epitaxial films JT Brangham, KY Meng, AS Yang, JC Gallagher, BD Esser, SP White, ... Physical Review B 94 (5), 054418, 2016 | 48 | 2016 |
| Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films JC Gallagher, BD Esser, R Morrow, SR Dunsiger, REA Williams, ... Scientific reports 6 (1), 22282, 2016 | 45 | 2016 |
| Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD JK Hite, TJ Anderson, LE Luna, JC Gallagher, MA Mastro, JA Freitas, ... Journal of Crystal Growth 498, 352-356, 2018 | 40 | 2018 |
| Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ... Journal of Physics D: Applied Physics 54 (3), 034005, 2020 | 36 | 2020 |
| High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen MJ Tadjer, AD Koehler, JA Freitas, JC Gallagher, MC Specht, ER Glaser, ... Applied Physics Letters 113 (19), 2018 | 36 | 2018 |
| Long range, non-destructive characterization of GaN substrates for power devices JC Gallagher, TJ Anderson, LE Luna, AD Koehler, JK Hite, NA Mahadik, ... Journal of Crystal Growth 506, 178-184, 2019 | 31 | 2019 |
| Structural and electronic properties of Si-and Sn-doped (− 201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres MJ Tadjer, JA Freitas, JC Culbertson, MH Weber, ER Glaser, AL Mock, ... Journal of Physics D: Applied Physics 53 (50), 504002, 2020 | 27 | 2020 |
| Room-temperature skyrmions in strain-engineered FeGe thin films S Budhathoki, A Sapkota, KM Law, S Ranjit, B Nepal, BD Hoskins, ... Physical Review B 101 (22), 220405, 2020 | 26 | 2020 |
| p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ... Journal of Applied Physics 128 (8), 2020 | 23 | 2020 |
| Effect of surface morphology on diode performance in vertical GaN Schottky diodes JK Hite, TJ Anderson, MA Mastro, LE Luna, JC Gallagher, RL Myers-Ward, ... ECS Journal of Solid State Science and Technology 6 (11), S3103, 2017 | 23 | 2017 |
| Demonstration of CuI as a P–N heterojunction to β-Ga2O3 JC Gallagher, AD Koehler, MJ Tadjer, NA Mahadik, TJ Anderson, ... Applied Physics Express 12 (10), 104005, 2019 | 20 | 2019 |
| A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 19 | 2022 |
| Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ... Applied Physics Letters 117 (8), 2020 | 19 | 2020 |
| Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices H Ahmad, TJ Anderson, JC Gallagher, EA Clinton, Z Engel, CM Matthews, ... Journal of Applied Physics 127 (21), 2020 | 18 | 2020 |
| Delta-doped β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 17 | 2021 |
Travis J. AndersonUniversity of Florida在 che.ufl.edu 的电子邮件经过验证
Travis J. AndersonUniversity of Florida在 che.ufl.edu 的电子邮件经过验证