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Thomas. J. Whittles
Thomas. J. Whittles
在 fkf.mpg.de 的电子邮件经过验证
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引用次数
引用次数
年份
Electronic and optical properties of single crystal SnS 2: an earth-abundant disulfide photocatalyst
LA Burton, TJ Whittles, D Hesp, WM Linhart, JM Skelton, B Hou, ...
Journal of Materials Chemistry A 4 (4), 1312-1318, 2016
3042016
Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory
TJ Whittles, LA Burton, JM Skelton, A Walsh, TD Veal, VR Dhanak
Chemistry of Materials 28 (11), 3718-3726, 2016
2162016
AgBiI4 as a Lead-Free Solar Absorber with Potential Application in Photovoltaics
HC Sansom, GFS Whitehead, MS Dyer, M Zanella, TD Manning, ...
Chemistry of Materials 29 (4), 1538-1549, 2017
1402017
Self‐Compensation in Transparent Conducting F‐Doped SnO2
JEN Swallow, BAD Williamson, TJ Whittles, M Birkett, TJ Featherstone, ...
Advanced Functional Materials 28 (4), 1701900, 2018
1192018
Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications
TJ Whittles, TD Veal, CN Savory, AW Welch, FW de Souza Lucas, ...
ACS applied materials & interfaces 9 (48), 41916-41926, 2017
872017
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
M Speckbacher, J Treu, TJ Whittles, WM Linhart, X Xu, K Saller, ...
Nano letters 16 (8), 5135-5142, 2016
782016
Photochemical CO 2 reduction in water using a co-immobilised nickel catalyst and a visible light sensitiser
G Neri, M Forster, JJ Walsh, CM Robertson, TJ Whittles, P Farràs, ...
Chemical Communications 52 (99), 14200-14203, 2016
572016
Cu (i) Cu (ii) BTC, a microporous mixed-valence MOF via reduction of HKUST-1
A Ahmed, CM Robertson, A Steiner, T Whittles, A Ho, V Dhanak, H Zhang
RSC advances 6 (11), 8902-8905, 2016
532016
Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics
TJ Whittles, TD Veal, CN Savory, PJ Yates, PAE Murgatroyd, JT Gibbon, ...
ACS applied materials & interfaces 11 (30), 27033-27047, 2019
492019
P3HT as a pinhole blocking back contact for CdTe thin film solar cells
JD Major, LJ Phillips, M Al Turkestani, L Bowen, TJ Whittles, VR Dhanak, ...
Solar Energy Materials and Solar Cells 172, 1-10, 2017
362017
A low-cost, sulfurization free approach to control optical and electronic properties of Cu2ZnSnS4 via precursor variation
S Gupta, TJ Whittles, Y Batra, V Satsangi, S Krishnamurthy, VR Dhanak, ...
Solar Energy Materials and Solar Cells 157, 820-830, 2016
332016
Electronic Characterisation of Earth‐Abundant Sulphides for Solar Photovoltaics
TJ Whittles
Springer, 2018
232018
Atomic layer deposition of Nb-doped ZnO for thin film transistors
A Shaw, JS Wrench, JD Jin, TJ Whittles, IZ Mitrovic, M Raja, VR Dhanak, ...
Applied Physics Letters 109 (22), 2016
232016
Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2
M Birkett, CN Savory, MK Rajpalke, WM Linhart, TJ Whittles, JT Gibbon, ...
APL Materials 6 (8), 2018
212018
Colloidal dual-band gap cell for photocatalytic hydrogen generation
W Li, G O'Dowd, TJ Whittles, D Hesp, Y Gründer, VR Dhanak, F Jäckel
Nanoscale 7 (40), 16606-16610, 2015
132015
Characterization of sulfurized CuSbS2 thin films for PV applications
E Peccerillo, J Major, L Phillips, R Treharne, TJ Whittles, V Dhanak, ...
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0266-0269, 2014
132014
Physical and electrical characterization of Mg-doped ZnO thin-film transistors
A Shaw, TJ Whittles, IZ Mitrovic, JD Jin, JS Wrench, D Hesp, VR Dhanak, ...
2015 45th European Solid State Device Research Conference (ESSDERC), 206-209, 2015
62015
The Electronic Structures of SnS, SnS2, and Sn2S3 for Use in PV
TJ Whittles, TJ Whittles
Electronic Characterisation of Earth‐Abundant Sulphides for Solar …, 2018
12018
The Use of Photoemission Spectroscopies for the Characterisation and Identification of Cu2ZnSnS4 and its Secondary Phases
TJ Whittles, TJ Whittles
Electronic Characterisation of Earth‐Abundant Sulphides for Solar …, 2018
12018
Tailoring Work Functions of Heterostructures by Varying the Depth of a Buried Monolayer
TJ Whittles, SC Parks, H Wang, P Jiang, Z Zhong, PA van Aken, ...
Advanced Materials Interfaces, 2400109, 2024
2024
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