First order phase transition at the irreversibility line of H Pastoriza, MF Goffman, A Arribere, F De La Cruz Physical review letters 72 (18), 2951, 1994 | 311 | 1994 |
Coherent manipulation of Andreev states in superconducting atomic contacts C Janvier, L Tosi, L Bretheau, ÇÖ Girit, M Stern, P Bertet, P Joyez, D Vion, ... Science 349 (6253), 1199-1202, 2015 | 259 | 2015 |
Optoelectronic switch and memory devices based on polymer‐functionalized carbon nanotube transistors J Borghetti, V Derycke, S Lenfant, P Chenevier, A Filoramo, M Goffman, ... Advanced materials 18 (19), 2535-2540, 2006 | 190 | 2006 |
Multiple-charge-quanta shot noise in superconducting atomic contacts R Cron, MF Goffman, D Esteve, C Urbina Physical review letters 86 (18), 4104, 2001 | 177 | 2001 |
Chemical optimization of self-assembled carbon nanotube transistors S Auvray, V Derycke, M Goffman, A Filoramo, O Jost, JP Bourgoin Nano Letters 5 (3), 451-455, 2005 | 165 | 2005 |
Spin-orbit splitting of Andreev states revealed by microwave spectroscopy L Tosi, C Metzger, MF Goffman, C Urbina, H Pothier, S Park, AL Yeyati, ... Physical Review X 9 (1), 011010, 2019 | 163 | 2019 |
Tunneling spectroscopy of a single quantum dot coupled to a superconductor: From Kondo ridge to Andreev bound states JD Pillet, P Joyez, R Žitko, MF Goffman Physical Review B—Condensed Matter and Materials Physics 88 (4), 045101, 2013 | 154 | 2013 |
Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors A Le Louarn, F Kapche, JM Bethoux, H Happy, G Dambrine, V Derycke, ... Applied physics letters 90 (23), 2007 | 147 | 2007 |
Self-assembled switches based on electroactuated multiwalled nanotubes E Dujardin, V Derycke, MF Goffman, R Lefevre, JP Bourgoin Applied Physics Letters 87 (19), 2005 | 140 | 2005 |
Gigahertz frequency flexible carbon nanotube transistors N Chimot, V Derycke, MF Goffman, JP Bourgoin, H Happy, G Dambrine Applied physics letters 91 (15), 2007 | 127 | 2007 |
Synthesis of thin and highly conductive DNA‐based palladium nanowires K Nguyen, M Monteverde, A Filoramo, L Goux‐Capes, S Lyonnais, ... Advanced Materials 20 (6), 1099-1104, 2008 | 124 | 2008 |
Supercurrent in atomic point contacts and Andreev states MF Goffman, R Cron, AL Yeyati, P Joyez, MH Devoret, D Esteve, C Urbina Physical review letters 85 (1), 170, 2000 | 110 | 2000 |
Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments MF Lambert, MF Goffman, JP Bourgoin, P Hesto Nanotechnology 14 (7), 772, 2003 | 84 | 2003 |
An 8-GHz f/sub t/carbon nanotube field-effect transistor for gigahertz range applications JM Bethoux, H Happy, G Dambrine, V Derycke, M Goffman, JP Bourgoin IEEE Electron Device Letters 27 (8), 681-683, 2006 | 81 | 2006 |
Vortex phase diagram of -axis superconducting correlation in the different vortex phases MF Goffman, JA Herbsommer, F De la Cruz, TW Li, PH Kes Physical Review B 57 (6), 3663, 1998 | 78 | 1998 |
Conduction channels of an InAs-Al nanowire Josephson weak link MF Goffman, C Urbina, H Pothier, J Nygård, CM Marcus, P Krogstrup New Journal of Physics 19 (9), 092002, 2017 | 62 | 2017 |
Carbon nanotube transistor optimization by chemical control of the nanotube–metal interface S Auvray, J Borghetti, MF Goffman, A Filoramo, V Derycke, JP Bourgoin, ... Applied physics letters 84 (25), 5106-5108, 2004 | 59 | 2004 |
Optically-configurable nanotube or nanowire semiconductor device J Borghetti, JP Bourgoin, P Mordant, V Derycke, A Filoramo, M Goffman US Patent 7,323,730, 2008 | 57 | 2008 |
Scaling law in carbon nanotube electromechanical devices R Lefèvre, MF Goffman, V Derycke, C Miko, L Forró, JP Bourgoin, P Hesto Physical review letters 95 (18), 185504, 2005 | 56 | 2005 |
Carbon nanotube chemistry and assembly for electronic devices V Derycke, S Auvray, J Borghetti, CL Chung, R Lefèvre, ... Comptes Rendus Physique 10 (4), 330-347, 2009 | 42 | 2009 |