| Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ... Nano letters 12 (9), 4518-4522, 2012 | 304 | 2012 |
| 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ... IEEE Electron Device Letters 36 (4), 375-377, 2015 | 200 | 2015 |
| 1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ... IEEE Electron Device Letters 37 (2), 161-164, 2015 | 197 | 2015 |
| Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ... Applied Physics Letters 107 (24), 2015 | 194 | 2015 |
| Terahertz imaging employing graphene modulator arrays B Sensale-Rodriguez, S Rafique, R Yan, M Zhu, V Protasenko, D Jena, ... Optics express 21 (2), 2324-2330, 2013 | 140 | 2013 |
| Efficient terahertz electro-absorption modulation employing graphene plasmonic structures B Sensale-Rodriguez, R Yan, M Zhu, D Jena, L Liu, H Grace Xing Applied Physics Letters 101 (26), 2012 | 121 | 2012 |
| GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ... 2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015 | 78 | 2015 |
| 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing IEEE Electron Device Letters 38 (8), 1071-1074, 2017 | 76 | 2017 |
| High breakdown single-crystal GaN pn diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ... Applied Physics Letters 107 (23), 2015 | 68 | 2015 |
| Strained GaN quantum-well FETs on single crystal bulk AlN substrates M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ... Applied Physics Letters 110 (6), 2017 | 67 | 2017 |
| Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ... Applied physics letters 104 (19), 2014 | 66 | 2014 |
| Activation of buried p-GaN in MOCVD-regrown vertical structures W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ... Applied Physics Letters 113 (6), 2018 | 59 | 2018 |
| Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing IEEE Electron Device Letters 37 (1), 16-19, 2015 | 57 | 2015 |
| Development of GaN vertical trench-MOSFET with MBE regrown channel W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ... IEEE Transactions on Electron Devices 65 (6), 2558-2564, 2018 | 54 | 2018 |
| Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing Applied Physics Express 7 (3), 031002, 2014 | 34 | 2014 |
| AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz S Ganguly, B Song, WS Hwang, Z Hu, M Zhu, J Verma, H Xing, D Jena physica status solidi (c) 11 (3‐4), 887-889, 2014 | 21 | 2014 |
| Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes M Qi, G Li, V Protasenko, P Zhao, J Verma, B Song, S Ganguly, M Zhu, ... Applied Physics Letters 106 (4), 2015 | 19 | 2015 |
| 600 V GaN vertical V-trench MOSFET with MBE regrown channel W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 16 | 2017 |
| GaN vertical nanowire and fin power MISFETs Z Hu, W Li, K Nomoto, M Zhu, X Gao, M Pilla, D Jena, HG Xing 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 16 | 2017 |
| Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ... Applied Physics Letters 105 (17), 2014 | 16 | 2014 |
Zongyang HuElectrical and Computer Engineering, Cornell University在 cornell.edu 的电子邮件经过验证
