| 600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen IEEE Electron Device Letters 34 (11), 1373-1375, 2013 | 279 | 2013 |
| High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen IEEE Electron Device Letters 34 (12), 1497-1499, 2013 | 185 | 2013 |
| Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges S Huang, Q Jiang, S Yang, Z Tang, KJ Chen IEEE Electron Device Letters 34 (2), 193-195, 2013 | 139 | 2013 |
| Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, KJ Chen IEEE electron device letters 35 (7), 723-725, 2014 | 129 | 2014 |
| High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation Z Tang, S Huang, Q Jiang, S Liu, C Liu, KJ Chen IEEE electron device letters 34 (3), 366-368, 2013 | 116 | 2013 |
| Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, B Shen, KJ Chen Applied Physics Letters 106 (5), 2015 | 109 | 2015 |
| Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen 2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013 | 92 | 2013 |
| Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen physica status solidi (c) 10 (11), 1397-1400, 2013 | 89 | 2013 |
| Thermally stable enhancement-mode GaN metal-isolator-semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier C Liu, S Yang, S Liu, Z Tang, H Wang, Q Jiang, KJ Chen IEEE Electron Device Letters 36 (4), 318-320, 2015 | 72 | 2015 |
| Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014 | 63 | 2014 |
| High- High Johnson's Figure-of-Merit 0.2- Gate AlGaN/GaN HEMTs on Silicon Substrate With Passivation S Huang, K Wei, G Liu, Y Zheng, X Wang, L Pang, X Kong, X Liu, Z Tang, ... IEEE electron device letters 35 (3), 315-317, 2014 | 61 | 2014 |
| Analytical modeling of capacitances for GaN HEMTs, including parasitic components A Zhang, L Zhang, Z Tang, X Cheng, Y Wang, KJ Chen, M Chan IEEE Transactions on Electron Devices 61 (3), 755-761, 2014 | 59 | 2014 |
| Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li physica status solidi (a) 212 (5), 1059-1065, 2015 | 58 | 2015 |
| High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ... 2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014 | 52 | 2014 |
| Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform Q Jiang, Z Tang, C Zhou, S Yang, KJ Chen IEEE Transactions on Electron Devices 61 (11), 3808-3813, 2014 | 46 | 2014 |
| Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes S Yang, S Liu, C Liu, Z Tang, Y Lu, KJ Chen 2014 IEEE International Electron Devices Meeting, 17.2. 1-17.2. 4, 2014 | 37 | 2014 |
| Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges S Yang, Z Tang, M Hua, Z Zhang, J Wei, Y Lu, KJ Chen IEEE Journal of the Electron Devices Society 8, 358-364, 2020 | 25 | 2020 |
| Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition Y Lu, Q Jiang, Z Tang, S Yang, C Liu, KJ Chen Applied Physics Express 8 (6), 064101, 2015 | 23 | 2015 |
| GaN‐to‐Si vertical conduction mechanisms in AlGaN/GaN‐on‐Si lateral heterojunction FET structures S Yang, Q Jiang, B Li, Z Tang, KJ Chen physica status solidi (c) 11 (3‐4), 949-952, 2014 | 23 | 2014 |
| A high-voltage low-standby-power startup circuit using monolithically integrated E/D-mode AlGaN/GaN MIS-HEMTs Q Jiang, Z Tang, C Liu, Y Lu, KJ Chen IEEE Transactions on Electron Devices 61 (3), 762-768, 2014 | 22 | 2014 |
