| Conductive-bridging random access memory: challenges and opportunity for 3D architecture D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap Nanoscale research letters 10, 1-23, 2015 | 103 | 2015 |
| Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface SZ Rahaman, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, ... Nanoscale research letters 7, 1-11, 2012 | 99 | 2012 |
| Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, MJ Kao, MJ Tsai Applied Physics Letters 101 (7), 2012 | 69 | 2012 |
| The role of Ti buffer layer thickness on the resistive switching properties of hafnium oxide-based resistive switching memories SZ Rahaman, YD Lin, HY Lee, YS Chen, PS Chen, WS Chen, CH Hsu, ... Langmuir 33 (19), 4654-4665, 2017 | 63 | 2017 |
| Bipolar resistive switching memory using Cu metallic filament in Ge0. 4Se0. 6 solid electrolyte SZ Rahaman, S Maikap, HC Chiu, CH Lin, TY Wu, YS Chen, PJ Tzeng, ... Electrochemical and Solid-State Letters 13 (5), H159, 2010 | 62 | 2010 |
| Novel Defects-Trapping RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current YS Chen, HY Lee, PS Chen, WS Chen, KH Tsai, PY Gu, TY Wu, CH Tsai, ... IEEE Electron Device Letters 35 (2), 202-204, 2013 | 57 | 2013 |
| Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, TC Tien, MJ Tsai Journal of Applied Physics 111 (6), 2012 | 56 | 2012 |
| Resistive switching memory characteristics of Ge/GeO x nanowires and evidence of oxygen ion migration A Prakash, S Maikap, SZ Rahaman, S Majumdar, S Manna, SK Ray Nanoscale research letters 8, 1-10, 2013 | 51 | 2013 |
| Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure S Chakrabarti, S Samanta, S Maikap, SZ Rahaman, HM Cheng Nanoscale research letters 11, 1-8, 2016 | 47 | 2016 |
| Improved resistive switching memory characteristics using core-shell IrOx nano-dots in Al2O3/WOx bilayer structure W Banerjee, S Maikap, SZ Rahaman, A Prakash, TC Tien, WC Li, ... Journal of The Electrochemical Society 159 (2), H177, 2011 | 41 | 2011 |
| Nanoscale (EOT= 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors S Maikap, SZ Rahaman, TC Tien Nanotechnology 19 (43), 435202, 2008 | 40 | 2008 |
| Pulse-width and temperature effect on the switching behavior of an etch-stop-on-MgO-barrier spin-orbit torque MRAM cell SZ Rahaman, IJ Wang, TY Chen, CF Pai, DY Wang, JH Wei, HH Lee, ... IEEE Electron Device Letters 39 (9), 1306-1309, 2018 | 39 | 2018 |
| Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ... Scientific Reports 7 (1), 11240, 2017 | 39 | 2017 |
| Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ... Nanoscale Research Letters 7, 1-11, 2012 | 38 | 2012 |
| High-κ Al2O3/WOx bilayer dielectrics for low-power resistive switching memory applications W Banerjee, SZ Rahaman, A Prakash, S Maikap Japanese Journal of Applied Physics 50 (10S), 10PH01, 2011 | 38 | 2011 |
| Excellent uniformity and multilevel operation in formation-free low power resistive switching memory using IrOx/AlOx/W cross-point W Banerjee, SZ Rahaman, S Maikap Japanese Journal of Applied Physics 51 (4S), 04DD10, 2012 | 29 | 2012 |
| Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory SZ Rahaman, YC Hsin, SY Yang, YJ Chang, HH Lee, KM Chen, IJ Wang, ... 2023 International VLSI Symposium on Technology, Systems and Applications …, 2023 | 27 | 2023 |
| Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution SZ Rahaman, HY Lee, YS Chen, YD Lin, PS Chen, WS Chen, PH Wang Applied Physics Letters 110 (21), 2017 | 21 | 2017 |
| Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics YD Lin, PS Chen, HY Lee, YS Chen, SZ Rahaman, KH Tsai, CH Hsu, ... Nanoscale research letters 12, 1-6, 2017 | 19 | 2017 |
| Resistance instabilities in a filament-based resistive memory FT Chen, HY Lee, YS Chen, SZ Rahaman, CH Tsai, KH Tsai, TY Wu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 1.1-5E. 1.7, 2013 | 18 | 2013 |
Siddheswar MaikapProfessor of Electronics Engineering, Chang Gung University在 mail.cgu.edu.tw 的电子邮件经过验证
