| Novel type-II material system for laser applications in the near-infrared regime C Berger, C Möller, P Hens, C Fuchs, W Stolz, SW Koch, A Ruiz Perez, ... AIP advances 5 (4), 047105, 2015 | 41 | 2015 |
| Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μm C Möller, C Fuchs, C Berger, A Ruiz Perez, M Koch, J Hader, JV Moloney, ... Applied Physics Letters 108 (7), 2016 | 32 | 2016 |
| High-temperature operation of electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As “W”-quantum well lasers emitting at 1.3 µm C Fuchs, A Brüggemann, MJ Weseloh, C Berger, C Möller, S Reinhard, ... Scientific reports 8 (1), 1422, 2018 | 24 | 2018 |
| Excitonic transitions in highly efficient (GaIn) As/Ga (AsSb) type-II quantum-well structures S Gies, C Kruska, C Berger, P Hens, C Fuchs, A Ruiz Perez, ... Applied Physics Letters 107 (18), 182104, 2015 | 21 | 2015 |
| Quantum-memory effects in the emission of quantum-dot microcavities C Berger, U Huttner, M Mootz, M Kira, SW Koch, JS Tempel, M Aßmann, ... Physical review letters 113 (9), 093902, 2014 | 21 | 2014 |
| Electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As single ‘W’-quantum well laser at 1.2 µm C Fuchs, C Berger, C Möller, M Weseloh, S Reinhard, J Hader, ... Electronics Letters 52 (22), 1875-1877, 2016 | 18 | 2016 |
| Gain spectroscopy of a type-II VECSEL chip C Lammers, M Stein, C Berger, C Möller, C Fuchs, AR Perez, ... Applied Physics Letters 109 (23), 232107, 2016 | 17 | 2016 |
| Fundamental transverse mode operation of a type‐II vertical‐external‐cavity surface‐emitting laser at 1.2 µm C Möller, F Zhang, C Fuchs, C Berger, A Rehn, A Ruiz Perez, ... Electronics Letters 53 (2), 93-94, 2017 | 10 | 2017 |
| Temperature-dependent spectral properties of (GaIn) As/Ga (AsSb)/(GaIn) As W-quantum well heterostructure lasers C Fuchs, A Baeumner, A Brueggemann, C Berger, C Moeller, S Reinhard, ... arXiv preprint arXiv:2012.01522, 2020 | 4 | 2020 |
| Microscopic Theory of Semiconductor Laser Material Systems C Berger Philipps-Universität Marburg, 2016 | 3 | 2016 |
| The development and fundamental analysis of type-II VECSELs at 1.2 µm (Conference Presentation) C Möller, C Fuchs, C Berger, F Zhang, A Rahimi-Iman, M Koch, AR Perez, ... Vertical External Cavity Surface Emitting Lasers (VECSELs) VII 10087, 115-115, 2017 | 2 | 2017 |
| Author Correction: High-temperature operation of electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As “W”-quantum well lasers emitting at 1.3 µm C Fuchs, A Brüggemann, MJ Weseloh, C Berger, C Möller, S Reinhard, ... Scientific Reports 8 (1), 7891, 2018 | | 2018 |
| Time-resolved gain spectroscopy on type-I and type-II VECSEL chips C Lammers, M Stein, M Fey, C Möller, C Fuchs, AR Perez, C Berger, ... CLEO: Applications and Technology, JW2A. 39, 2016 | | 2016 |
| 1.2 μm emitting VECSEL based on type-II aligned QWs C Möller, C Berger, C Fuchs, AR Perez, SW Koch, J Hader, JV Moloney, ... Vertical External Cavity Surface Emitting Lasers (VECSELs) VI 9734, 57-61, 2016 | | 2016 |
Stephan W. KochProfessor, Fachbereich Physik, Philipps Universitaet Marburg, Renthof 5, Germany在 physik.uni-marburg.de 的电子邮件经过验证
