受强制性开放获取政策约束的文章 - Navjeet Bagga了解详情
无法在其他位置公开访问的文章：4 篇
Negative-to-positive differential resistance transition in ferroelectric FET: physical insight and utilization in analog circuits
N Chauhan, N Bagga, S Banchhor, A Datta, S Dasgupta, A Bulusu
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 69 …, 2021
强制性开放获取政策： Department of Science & Technology, India
Impact of random spatial fluctuation in non-uniform crystalline phases on multidomain MFIM capacitor and negative capacitance FDSOI
N Chauhan, C Garg, K Ni, AK Behera, S Yadav, S Banchhor, N Bagga, ...
2022 IEEE International Reliability Physics Symposium (IRPS), P23-1-P23-6, 2022
强制性开放获取政策： Department of Science & Technology, India
Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k· p approach
N Jain, I Mal, DP Samajdar, N Bagga
Materials Science in Semiconductor Processing 148, 106822, 2022
强制性开放获取政策： Council of Scientific and Industrial Research, India
Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants
RK Jaisawal, S Rathore, PN Kondekar, N Bagga
Solid-State Electronics 215, 108896, 2024
强制性开放获取政策： Council of Scientific and Industrial Research, India
可在其他位置公开访问的文章：1 篇
Investigation of Optoelectronic Performance of InAsNBi for Infrared Detection
N Jain, I Mal, DP Samajdar, N Bagga
Tailored Functional Materials: Select Proceedings of MMETFP 2021, 475-484, 2022
强制性开放获取政策： Council of Scientific and Industrial Research, India
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