| Maximum power point tracking using model reference adaptive control R Khanna, Q Zhang, WE Stanchina, GF Reed, ZH Mao IEEE Transactions on power Electronics 29 (3), 1490-1499, 2013 | 157 | 2013 |
| 100+ GHz static divide-by-2 circuit in InP-DHBT technology M Mokhtari, C Fields, RD Rajavel, M Sokolich, JF Jensen, WE Stanchina IEEE Journal of Solid-State Circuits 38 (9), 1540-1544, 2003 | 81 | 2003 |
| Effects of semiconducting and metallic single-walled carbon nanotubes on performance of bulk heterojunction organic solar cells L Liu, WE Stanchina, G Li Applied Physics Letters 94 (23), 2009 | 70 | 2009 |
| An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs WE Stanchina, JF Jensen, RH Walden, M Hafizi, HC Sun, T Liu, ... GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th …, 1995 | 70 | 1995 |
| 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology JF Jensen, M Hafizi, WE Stanchina, RA Metzger, DB Rensch GaAs IC Symposium Technical Digest 1992, 101-104, 1992 | 70 | 1992 |
| Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors S Datta, S Shi, KP Roenker, MM Cahay, WE Stanchina IEEE Transactions on Electron Devices 45 (8), 1634-1643, 1998 | 67 | 1998 |
| InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V M Mokhtari, T Swahn, RH Walden, WE Stanchina, M Kardos, T Juhola, ... IEEE Journal of Solid-State Circuits 32 (9), 1371-1383, 1997 | 63 | 1997 |
| AlInAs/GaInAs HBT IC Technology JF Jensen, WE Stanchina, RA Metzger, DB Rensch, RF Lohr, RW Quen, ... IEEE Journal of Solid-State Circuits 26 (3), 415-421, 1991 | 63 | 1991 |
| An analytical model for evaluating the influence of device parasitics on Cdv/dt induced false turn-on in SiC MOSFETs R Khanna, A Amrhein, W Stanchina, G Reed, ZH Mao 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and …, 2013 | 62 | 2013 |
| High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links J Mullrich, H Thurner, E Mullner, JF Jensen, WE Stanchina, M Kardos, ... IEEE Journal of Solid-State Circuits 35 (9), 1260-1265, 2000 | 61 | 2000 |
| 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology M Hafizi, JF Jensen, RA Metzger, WE Stanchina, DB Rensch, YK Allen IEEE Electron Device Letters 13 (12), 612-614, 1992 | 48 | 1992 |
| Smart grid education models for modern electric power system engineering curriculum GF Reed, WE Stanchina IEEE PES General Meeting, 1-5, 2010 | 45 | 2010 |
| Reliability of AlInAs/GaInAs heterojunction bipolar transistors M Hafizi, WE Stanchina, RA Metzger, JF Jensen, F Williams IEEE transactions on electron devices 40 (12), 2178-2185, 1993 | 45 | 1993 |
| Indium phosphide ICs unleash the high-frequency spectrum G Raghavan, M Sokolich, WE Stanchina IEEE Spectrum 37 (10), 47-52, 2000 | 43 | 2000 |
| Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's M Hafizi, WE Stanchina, RA Metzger, PA Macdonald, F Williams IEEE transactions on electron devices 40 (9), 1583-1588, 1993 | 43 | 1993 |
| A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology M Sokolich, DP Docter, YK Brown, AR Kramer, JF Jensen, WE Stanchina, ... GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th …, 1998 | 42 | 1998 |
| Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits UK Mishra, JF Jensen, DB Rensch, AS Brown, WE Stanchina, RJ Trew, ... IEEE electron device letters 10 (10), 467-469, 1989 | 42 | 1989 |
| The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors M Hafizi, RA Metzger, WE Stanchina, DB Rensch, JF Jensen, WW Hooper IEEE electron device letters 13 (3), 140-142, 1992 | 39 | 1992 |
| High-speed multiplexers: A 50 Gb/s 4: 1 MUX in InP HBT technology JP Mattia, R Pullela, G Georgieu, Y Baeyens, HS Tsai, YK Chen, ... GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st …, 1999 | 38 | 1999 |
| Growth and characterization of low temperature AlInAs RA Metzger, AS Brown, WE Stanchina, M Lui, RG Wilson, TV Kargodorian, ... Journal of crystal growth 111 (1-4), 445-449, 1991 | 32 | 1991 |
Raghav KhannaUniversity of Toledo在 utoledo.edu 的电子邮件经过验证
