| Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields G Yu, P Upadhyaya, Y Fan, JG Alzate, W Jiang, KL Wong, S Takei, ... Nature nanotechnology 9 (7), 548-554, 2014 | 1014 | 2014 |
| Low-power non-volatile spintronic memory: STT-RAM and beyond KL Wang, JG Alzate, PK Amiri Journal of Physics D: Applied Physics 46 (7), 074003, 2013 | 658 | 2013 |
| Voltage-induced ferromagnetic resonance in magnetic tunnel junctions J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ... Physical review letters 108 (19), 197203, 2012 | 319 | 2012 |
| Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ... Applied Physics Letters 108 (1), 2016 | 243 | 2016 |
| Electric-field-induced spin wave generation using multiferroic magnetoelectric cells S Cherepov, P Khalili Amiri, JG Alzate, K Wong, M Lewis, P Upadhyaya, ... Applied Physics Letters 104 (8), 2014 | 192 | 2014 |
| Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ... IEEE Transactions on Magnetics 51 (11), 1-7, 2015 | 183 | 2015 |
| Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO| CoFeB| Ta magnetic tunnel junctions JG Alzate, P Khalili Amiri, G Yu, P Upadhyaya, JA Katine, J Langer, ... Applied physics letters 104 (11), 2014 | 161 | 2014 |
| Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation G Yu, P Upadhyaya, KL Wong, W Jiang, JG Alzate, J Tang, PK Amiri, ... Physical Review B 89 (10), 104421, 2014 | 161 | 2014 |
| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 149 | 2018 |
| 13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V … P Jain, U Arslan, M Sekhar, BC Lin, L Wei, T Sahu, J Alzate-Vinasco, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 212-214, 2019 | 140 | 2019 |
| 13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019 | 134 | 2019 |
| Voltage-controlled magnetic memory element with canted magnetization KL Wang, PK Amiri, JG Alzate US Patent 9,036,407, 2015 | 126 | 2015 |
| Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ... Applied Physics Letters 98 (10), 2011 | 114 | 2011 |
| Voltage-induced switching of nanoscale magnetic tunnel junctions JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ... 2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012 | 111 | 2012 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 105 | 2019 |
| Effect of the oxide layer on current-induced spin-orbit torques in Hf| CoFeB| MgO and Hf| CoFeB| TaOx structures M Akyol, JG Alzate, G Yu, P Upadhyaya, KL Wong, A Ekicibil, ... Applied Physics Letters 106 (3), 2015 | 93 | 2015 |
| Current-induced spin-orbit torque switching of perpendicularly magnetized Hf| CoFeB| MgO and Hf| CoFeB| TaOx structures M Akyol, G Yu, JG Alzate, P Upadhyaya, X Li, KL Wong, A Ekicibil, ... Applied Physics Letters 106 (16), 2015 | 78 | 2015 |
| Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM H Lee, JG Alzate, R Dorrance, X Cai, D Markovic, P Khalili Amiri, K Wang IEEE Transactions on Magnetism, 2014 | 64 | 2014 |
| Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM R Dorrance, JG Alzate, SS Cherepov, P Upadhyaya, IN Krivorotov, ... IEEE Electron Device Letters 34 (6), 753-755, 2013 | 63 | 2013 |
| Electric-field-induced thermally assisted switching of monodomain magnetic bits P Khalili Amiri, P Upadhyaya, JG Alzate, KL Wang Journal of Applied Physics 113 (1), 2013 | 53 | 2013 |
Kang L. WangElectrical Engineering Department在 ee.ucla.edu 的电子邮件经过验证
