| Analysis of the bipolar resistive switching behavior of a biocompatible glucose film for resistive random access memory SP Park, YJ Tak, HJ Kim, JH Lee, H Yoo, HJ Kim Advanced Materials 30 (26), 1800722, 2018 | 100 | 2018 |
| Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments YJ Tak, B Du Ahn, SP Park, SJ Kim, AR Song, KB Chung, HJ Kim Scientific reports 6 (1), 21869, 2016 | 91 | 2016 |
| Resistive switching properties through iodine migrations of a hybrid perovskite insulating layer DJ Kim, YJ Tak, WG Kim, JK Kim, JH Kim, HJ Kim Advanced Materials Interfaces 4 (6), 1601035, 2017 | 88 | 2017 |
| High-pressure gas activation for amorphous indium-gallium-zinc-oxide thin-film transistors at 100° C WG Kim, YJ Tak, B Du Ahn, TS Jung, KB Chung, HJ Kim Scientific reports 6 (1), 23039, 2016 | 85 | 2016 |
| Enhanced electrical characteristics and stability via simultaneous ultraviolet and thermal treatment of passivated amorphous In–Ga–Zn–O thin-film transistors YJ Tak, DH Yoon, S Yoon, UH Choi, MM Sabri, BD Ahn, HJ Kim ACS applied materials & interfaces 6 (9), 6399-6405, 2014 | 80 | 2014 |
| Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors MM Sabri, J Jung, DH Yoon, S Yoon, YJ Tak, HJ Kim Journal of Materials Chemistry C 3 (28), 7499-7505, 2015 | 60 | 2015 |
| Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In–Ga–Zn–O and CH3NH3PbI3 Films YJ Tak, DJ Kim, WG Kim, JH Lee, SJ Kim, JH Kim, HJ Kim ACS applied materials & interfaces 10 (15), 12854-12861, 2018 | 59 | 2018 |
| Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors S Yoon, YJ Tak, DH Yoon, UH Choi, JS Park, BD Ahn, HJ Kim ACS applied materials & interfaces 6 (16), 13496-13501, 2014 | 55 | 2014 |
| Improvement of electrical characteristics and stability of amorphous indium gallium zinc oxide thin film transistors using nitrocellulose passivation layer KY Shin, YJ Tak, WG Kim, S Hong, HJ Kim ACS Applied Materials & Interfaces 9 (15), 13278-13285, 2017 | 53 | 2017 |
| Artificially fabricated subgap states for visible-light absorption in indium–gallium–zinc oxide phototransistor with solution-processed oxide absorption layer J Chung, YJ Tak, WG Kim, BH Kang, HJ Kim ACS applied materials & interfaces 11 (42), 38964-38972, 2019 | 40 | 2019 |
| A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique S Yoon, SJ Kim, YJ Tak, HJ Kim Scientific reports 7 (1), 43216, 2017 | 38 | 2017 |
| Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process J Chung, YJ Tak, WG Kim, JW Park, TS Kim, JH Lim, HJ Kim Journal of Materials Chemistry C 6 (18), 4928-4935, 2018 | 34 | 2018 |
| Reduction of activation temperature at 150° C for IGZO films with improved electrical performance via UV-thermal treatment YJ Tak, SP Park, TS Jung, H Lee, WG Kim, JW Park, HJ Kim Journal of Information Display 17 (2), 73-78, 2016 | 34 | 2016 |
| Multifunctional, room-temperature processable, heterogeneous organic passivation layer for oxide semiconductor thin-film transistors YJ Tak, ST Keene, BH Kang, WG Kim, SJ Kim, A Salleo, HJ Kim ACS applied materials & interfaces 12 (2), 2615-2624, 2019 | 33 | 2019 |
| The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films HJ Kim, YJ Tak, SP Park, JW Na, Y Kim, S Hong, PH Kim, GT Kim, BK Kim, ... Scientific reports 7 (1), 12469, 2017 | 32 | 2017 |
| A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature H Yoo, YJ Tak, WG Kim, Y Kim, HJ Kim Journal of Materials Chemistry C 6 (23), 6187-6193, 2018 | 29 | 2018 |
| Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors Y Kim, YJ Tak, HJ Kim, WG Kim, H Yoo, HJ Kim Scientific reports 8 (1), 5546, 2018 | 28 | 2018 |
| Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors WG Kim, YJ Tak, HJ Kim Journal of information display 19 (1), 39-43, 2018 | 27 | 2018 |
| Low-temperature activation under 150° C for amorphous IGZO TFTs using voltage bias H Lee, KS Chang, YJ Tak, TS Jung, JW Park, WG Kim, J Chung, ... Journal of Information Display 18 (3), 131-135, 2017 | 25 | 2017 |
| Electric field-aided selective activation for indium-gallium-zinc-oxide thin film transistors H Lee, KS Chang, YJ Tak, TS Jung, JW Park, WG Kim, J Chung, ... Scientific reports 6 (1), 35044, 2016 | 22 | 2016 |
