| 15 kV-class implantation-free 4H-SiC BJTs with record high current gain A Salemi, H Elahipanah, K Jacobs, CM Zetterling, M Östling IEEE Electron Device Letters 39 (1), 63-66, 2017 | 51 | 2017 |
| Time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, MH White, A Salemi, D Sheridan, AK Agarwal IEEE Journal of the Electron Devices Society 9, 633-639, 2021 | 38 | 2021 |
| 5.8-kV implantation-free 4H-SiC BJT with multiple-shallow-trench junction termination extension H Elahipanah, A Salemi, CM Zetterling, M Östling IEEE Electron Device Letters 36 (2), 168-170, 2014 | 35 | 2014 |
| Investigation of gate leakage current behavior for commercial 1.2 kV 4H-SiC power MOSFETs S Zhu, T Liu, MH White, AK Agarwal, A Salemi, D Sheridan 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 30 | 2021 |
| Body diode reliability of commercial SiC power MOSFETs M Kang, S Yu, D Xing, T Liu, A Salemi, K Booth, S Zhu, MH White, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 27 | 2019 |
| 500° C high current 4H-SiC lateral BJTs for high-temperature integrated circuits H Elahipanah, S Kargarrazi, A Salemi, M Östling, CM Zetterling IEEE Electron Device Letters 38 (10), 1429-1432, 2017 | 27 | 2017 |
| Area-and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance A Salemi, H Elahipanah, G Malm, CM Zetterling, M Östling 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 27 | 2015 |
| Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes A Salemi, H Elahipanah, B Buono, A Hallén, JU Hassan, P Bergman, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 26 | 2015 |
| Gate oxide reliability studies of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 22 | 2020 |
| A wafer-scale Ni-salicide contact technology on n-type 4H-SiC H Elahipanah, A Asadollahi, M Ekström, A Salemi, CM Zetterling, ... ECS Journal of Solid State Science and Technology 6 (4), P197, 2017 | 20 | 2017 |
| Gate leakage current and time-dependent dielectric breakdown measurements of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 19 | 2019 |
| Current saturation characteristics and single-pulse short-circuit tests of commercial SiC MOSFETs D Xing, B Hu, S Yu, Y Zhang, T Liu, A Salemi, M Kang, J Wang, A Agarwal 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 6179-6183, 2019 | 19 | 2019 |
| Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs A Salemi, H Elahipanah, CM Zetterling, M Ostling Electron Device Letters, IEEE 36 (10), 2015 | 16 | 2015 |
| Bias-induced threshold voltage instability and interface trap density extraction of 4H-SiC MOSFETs S Yu, M Kang, T Liu, D Xing, A Salemi, MH White, AK Agarwal 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 14 | 2019 |
| Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing M Ekström, SB Hou, H Elahipanah, A Salemi, M Östling, CM Zetterling Materials Science Forum 924, 389-392, 2018 | 12 | 2018 |
| Area-optimized JTE for 4.5 kV non ion-implanted 4H-SiC BJT A Salemi, H Elahipanah, B Buono, CM Zetterling, M Östling Materials Science Forum 740, 974-977, 2013 | 12 | 2013 |
| Kinetic modeling of low temperature epitaxy growth of SiGe using disilane and digermane M Kolahdouz, A Salemi, M Moeen, M Östling, HH Radamson Journal of The Electrochemical Society 159 (5), H478, 2012 | 11 | 2012 |
| Threshold voltage instability of commercial 1.2 kV SiC power MOSFETs S Yu, T Liu, S Zhu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 10 | 2020 |
| Design strategies for rugged SiC power devices D Xing, T Liu, S Yu, M Kang, A Salemi, M White, A Agarwal 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 10 | 2019 |
| Investigation of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges A Salemi, H Elahipanah, CM Zetterling, M Östling Materials Science Forum 821, 834-837, 2015 | 10 | 2015 |
Mikael ÖstlingKTH Royal Institute of Technology在 kth.se 的电子邮件经过验证
